Binary tin chalcogenides (SnS and SnSe) are investigated extensively for thin-film solar cells (TFSCs). The conventional sulfo-selenization of elemental Sn follows multiple and rigorous procedures. Herein, we have developed a one-step procedure for developing a mixed-phase SnS x Se 1−x thin film. Meanwhile, reports on synthesizing mixed-phase SnS x Se 1−x (0 < x < 1) thin films for TFSCs are scarce. In this study, SnS x Se 1−x thin films are synthesized by vapor transport deposition using a mixture of SnS and SnSe source powders for evaporation. Energy-dispersive X-ray spectroscopy analysis confirmed the formation of homogeneous and uniformly distributed ternary SnS x Se 1−x alloys. The corresponding X-ray diffraction patterns revealed that the 2θ values of the characteristic (111) peak of the orthorhombic structure shifted toward a lower angle as the Se-content increased owing to the expansion of the lattice constant. The S-rich SnS x Se 1−x devices exhibited a superior V oc , while the Se-rich devices displayed a superior J sc . The highest efficiency of 3.75% was achieved for the optimized SnS 0.70 Se 0.30 absorber layer, which is significantly higher than those of pure SnS or SnSe devices.
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