A novel highly efficient ionic electro‐optic quinolinium single crystals for THz wave applications is reported. Acentric quinolinium derivatives, HMQ‐T (2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐methylbenzenesulfonate) and HMQ‐MBS (2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐methoxybenzenesulfonate) exhibit high order parameters cos3θp = 0.92 and cos3θp = 1.0, respectively, as well as a large macroscopic optical nonlinearity, which is in the range of the benchmark stilbazolium DAST (N,N‐dimethylamino‐N’‐methylstilbazolium 4‐methylbenzenesulfonate) and phenolic polyene OH1 (2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile) crystals. As‐grown unpolished bulk HMQ‐T crystals with a side length of about 6 mm and thickness of 0.56 mm exhibit 3.1 times higher THz generation efficiency than 0.37 mm thick OH1 crystals and about 8.4 times higher than 1 mm thick inorganic standard ZnTe crystals at the near‐infrared fundamental wavelength of 836 nm. Therefore, HMQ crystals with high order parameter obviously have a very high potential for high power THz‐wave generation and its applications.
The efficient passive mode-locking of a Ti:sapphire laser with a monolayer graphene saturable absorber is demonstrated for the first time. High-quality and large-area (1 in.) monolayer graphene, synthesized by chemical vapor deposition, exhibits ultrafast recovery times and excellent nonlinear absorption behavior for bulk solid-state laser mode-locking near 800 nm. The continuous-wave mode-locked Ti:sapphire laser generates 63-fs pulses with output powers up to 480 mW under stable operation at 99.4 MHz.
High-quality monolayer graphene as large as 1.2×1.2 cm2 was synthesized by chemical vapor deposition and used as a transmitting saturable absorber for efficient passive mode-locking of a femtosecond bulk solid-state laser. The monolayer graphene mode-locked Cr:forsterite laser was tunable around 1.25 μm and delivered sub-100 fs pulses with output powers up to 230 mW. The nonlinear optical characteristics of the monolayer graphene saturable absorber and the mode-locked operation were then compared with the case of the bilayer graphene saturable absorber.
The high-power broadband terahertz (THz) generator is an essential tool for a wide range of THz applications. Here, we present a novel highly efficient electro-optic quinolinium single crystal for THz wave generation. For obtaining intense and broadband THz waves by optical-to-THz frequency conversion, a quinolinium crystal was developed to fulfill all the requirements, which are in general extremely difficult to maintain simultaneously in a single medium, such as a large macroscopic electro-optic response and excellent crystal characteristics including a large crystal size with desired facets, good environmental stability, high optical quality, wide transparency range, and controllable crystal thickness. Compared to the benchmark inorganic and organic crystals, the new quinolinium crystal possesses excellent crystal properties and THz generation characteristics with broader THz spectral coverage and higher THz conversion efficiency at the technologically important pump wavelength of 800 nm. Therefore, the quinolinium crystal offers great potential for efficient and gap-free broadband THz wave generation.
We report on passive mode-locking of a Ti:sapphire laser employing a single-walled carbon nanotube saturable absorber (SWCNT-SA) specially designed and fabricated for wavelengths near 800 nm. Mode-locked pulses as short as 62 fs were generated at a repetition rate of 99.4 MHz. We achieved output powers from the SWCNT-SA mode-locked laser as high as 600 mW with a slope efficiency of 26%. The characteristics of SWCNT-SA-assisted mode-locking were compared with those of Kerr-lens mode-locking without SWCNT-SA.
We investigate transmission characteristics and sheet conductivity of mono- to multi-layer graphene deposited on quartz in the terahertz (THz) frequency region. The free carrier absorption and Fabry-Perot interference between graphene layers give rise to nonlinear decrease of THz transmission from 76.7% to 27% for mono- to 12-layer graphene. These phenomena are well explained with a modified theoretical model based on Drude conductivity. The optical sheet conductivity of multi-layer graphene, made by layer-by-layer random stacking of high-quality mono-layer graphene, at 1 THz exhibits two orders of magnitude higher values than the universal optical conductivity due to intraband transition of intrinsic graphene.
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