Single-walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near-infrared, electrically-driven, classical or nonclassical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single-tubes is challenging and heavily influenced by device fabrication, architecture and biasing conditions. Here we present electroluminescence spectroscopy data of ultra-short channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing and no quenching is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibits cold emission and linewidths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the linewidth, absence of intensity saturation and exciton-exciton annihilation, environmental effects like dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions.
Supporting InformationContent: Data on the high bias dependence of excitonic emission (Fig. S1), electrical biasing and power dissipation versus light emission from excitons and trions in a hole-doped (9,8)-device ( Fig. S2), impact of annealing on transconductance curve (Fig. S3), and measurements and simulations regarding the electroluminescence detection efficiency of the setup.
Emerging applications in the mid-infrared (MIR) stimulate the growth and development of novel optical light sources. Soliton self-frequency shift (SSFS) in soft glass fiber currently shows great potential as an efficient approach toward the generation of broadly tunable femtosecond pulses in the MIR. In this work, we demonstrate a highly efficient tunable soliton source based on SSFS in chalcogenide glass. We show a simple and fully fiberized system to generate these continuously tunable Raman solitons over a broad spectral range of 2.047–2.667 µm, which consumes no more than 87 pJ per pulse. The spectral measurements suggest that the generated pulses are as short as 62 fs with a maximum power conversion efficiency of 43%. This result is realized thanks to an 8 cm long
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microstructure optical fiber tapered into a microwire. Thanks to their broad transparency, their high nonlinearity, and their adjustable chromatic dispersion, chalcogenide microwires are promising components for the development of compact and highly efficient MIR optical sources with low power consumption.
Alloys of sulphur, selenium and tellurium, often referred to as chalcogenide semiconductors offer a highly versatile, compositionally-controllable material platform for a variety of passive and active photonic applications. They are optically nonlinear, photoconductive materials with wide transmission windows that present various high- and low-index dielectric, low-epsilon and plasmonic properties across ultra-violet, visible and infrared frequencies, in addition to an ultra-fast, non-volatile, electrically-/optically-induced switching capability between phase states with markedly different electromagnetic properties. This roadmap collection presents an in-depth account of the critical role that chalcogenide semiconductors play within various traditional and emerging photonic technology platforms. The potential of this field going forward is demonstrated by presenting context and outlook on selected socioeconomically important research streams utilizing chalcogenide semiconductors. To this end, this roadmap encompasses selected topics that range from systematic design of material properties and switching kinetics to device level nanostructuring and integration within various photonic system architectures.
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