The thermoelectric properties of hybridized band-gap semiconductor CeRu 4 P 12 and CeOs 4 P 12 with the filled skutterudite-type structure have been studied. Skutterudites have been identified recently as promising candidates for thermoelectric applications such as in solid-state refrigeration or power generation. Polycrystalline samples of CeRu 4 P 12 and CeOs 4 P 12 were synthesized with a high-pressure cell under high temperature using a cubic-anvil high-pressure apparatus. The samples were characterized by X-ray diffractometry. The Seebeck coefficient, electrical resistivity, Hall coefficient and thermal conductivity were measured. The Seebeck coefficients of both compounds are significantly large and the power factor values are of the order of 10 −3 W/mK 2 . The effect of hybridization between the Ce 4f and pnicogen p states or transition metal d states is important for determining the thermoelectric properties of this system.
A new skutterudite compound LaxRh4P12
has been prepared at around 1100 °C
and 4 GPa. This product was characterized by powder x-ray
diffraction at ambient pressure. The x-ray diffraction profile of
LaxRh4P12 is
indexed to the filled skutterudite-type structure. The lattice constant of this sample is 8.0581(5) Å. The
x
value estimated from x-ray diffraction and electron probe microanalysis data is about 0.6.
Electrical and magnetic properties of this compound have been studied at low temperatures.
LaxRh4P12
showed a superconducting transition at around 17 K. This compound has the highest
Tc
among metal phosphides. The thermoelectric power of the new compound is negative,
S = −47 µV K−1, at room temperature. The new superconducting material
LaxRh4P12
is an n-type conductor.
The temperature dependence of transmission loss for IR-transmitting chalcogenide glass fibers of sulfur (S)-based, selenium (Se)-based and tellurium (Te)-containing glasses were investigated above room temperature. The influence of temperature on transmission loss significantly depended upon the kind of chalcogen element in the glass. The losses of S-based and Se-based glass fibers were slightly sensitive to temperature. On the other hand, the loss of Te-containing glass fibers increased considerably with temperature. The higher the Te content was, the greater the temperature dependence of transmission loss became. The characteristic behavior of Te-containing glass fibers could be attributed mainly to the additional absorption of due to the increase in the number of thermally excited free carriers with Te content, analogous to Ge and GaAs semiconductors.
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