Distributed Generation (DG) has become an essential part of the smart grids due to the widespread integration of renewable energy sources. Reactive power compensation is still one of most important research topics in smart grids. DG units can be used for reactive power compensation purposes, therefore we can improve the voltage profile and minimize power losses in order to improve the power quality. In this paper two methods will be used to accomplish the mentioned tasks; the first technique depends on the reactive power demand change of the proposed network loads, whereas the second technique uses an algorithm to control DG units according to the measured voltage values in the feeders to generate the needed reactive power. Both methods were applied to different scenarios of DG unit positions and different reactive power values of loads. The chosen DG unit is made up of a Type-4 wind farm which could be used as a general unit where it is able to control reactive power generation in a wider range separately from active power. The simulation results show that using these two methods, the voltage profile could be improved, power losses reduced and the power factor increased according to the placement of DG units.
This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, I OFF, and drive current, I ON for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al 2 O 3 , HfO 2 , and TiO 2 as the material gate dielectric, with TiSi 2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current I OFF . Thus, excellent dielectric properties such as high-K constant, low I OFF , higher I ON , threshold voltage V TH , and electrical characteristics were demonstrated. From the simulation results of I ON and I OFF, it was proven that HfO 2 is the best dielectric material with combination of metal gate, TiSi 2 .
This paper reports the effects of a multiple zincation process on the Al bond pad surface prior to electroless nickel immersion gold deposition. The study of multiple zincation comprises the surface topography and morphology of the appearance of the Al bond pad. In addition, by comprehension of the effects of the multiple zincation process, the study includes investigating the Al dissolution rate and adhesion strength between eutectic a 37Pb∕63Sn solder ball and an under bump metallurgy (UBM) interface. Scanning electron microscopy, energy dispersive x-ray, atomic force microscopy, focused ion beam, and an Intellectest STORM series FA1500 shear tester were used as analytical tools in this study. The results suggest that the first zincation process follows the contour of the initial bond pad. The second zincation produces a slightly better surface appearance with a smooth and fine Zn crystallite. The Zn crystallites become a continuous film with the deposits looking like an island formation after the third zincation. The smooth surface of the third zincation, as an effect of multiple zincation, is later transferred to Ni and Au surfaces. The smooth surface of the UBM leads to a better shear strength with only a minimum Al dissolved.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.