Time resolved studies of germylene, GeH 2 , generated by laser flash photolysis of 3,4dimethylgermacyclopentene-3, have been carried out to obtain rate constants for its bimolecular reaction with acetylene, C 2 H 2 . The reaction was studied in the gas-phase over the pressure range 1-100 Torr, with SF 6 as bath gas, at 5 temperatures in the range 297-553 K. The reaction showed a very slight pressure dependence at higher temperatures. The high pressure rate constants (obtained by extrapolation at the three higher temperatures) gave the Arrhenius equation:These Arrhenius parameters are consistent with a fast reaction occurring at approximately 30% of the collision rate at 298 K. Quantum chemical calculations (both DFT and ab initio G2//B3LYP and G2//QCISD) of the GeC 2 H 4 potential energy surface (PES), show that GeH 2 þ C 2 H 2 react initially to form germirene which can isomerise to vinylgermylene with a relatively low barrier. RRKM modelling, based on a loose association transition state, but assuming vinylgermylene is the end product (used in combination with a weak collisional deactivation model) predicts a strong pressure dependence using the calculated energies, in conflict with the experimental evidence. The detailed GeC 2 H 4 PES shows considerable complexity with ten other accessible stable minima (B3LYP level), the three most stable of which are all germylenes. Routes through this complex surface were examined in detail. The only product combination which appears capable of satisfying the observed lack of a strong pressure dependence is Ge( 3 P) þ C 2 H 4 . C 2 H 4 was confirmed as a product by GC analysis. Although the formation of these products are shown to be possible by singlet-triplet curve crossing during dissociation of 1-germiranylidene (1-germacyclopropylidene), it seems more likely (on thermochemical grounds) that the triplet biradical, GeCH 2 CH 2 , is the immediate product precursor. Comparisons are made with the reaction of SiH 2 with C 2 H 2 .

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The results of time resolved gas phase studies of labile germylenes (GeH 2 and GeMe 2 ) and dimethylstannylene (SnMe 2 ) reactions reported to date are considered together with data of quantum chemical investigations of the potential energy surfaces of these systems. Reaction mechanisms are discussed. A comparison of reactivity in the series of carbene analogs, ER 2 (E = Si, Ge, Sn, R = H, Me), is made.

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Time-resolved studies of germylene, GeH(2), and dimethygermylene, GeMe(2), generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to try to obtain rate coefficients for their bimolecular reactions with dimethylgermane, Me(2)GeH(2), in the gas-phase. GeH(2) + Me(2)GeH(2) was studied over the pressure range 1-100 Torr with SF(6) as bath gas and at five temperatures in the range 296-553 K. Only slight pressure dependences were found (at 386, 447 and 553 K). RRKM modelling was carried out to fit these pressure dependences. The high pressure rate coefficients gave the Arrhenius parameters: log(A/cm(3) molecule(-1) s(-1)) = -10.99 +/- 0.07 and E(a) =-(7.35 +/- 0.48) kJ mol(-1). No reaction could be found between GeMe(2) + Me(2)GeH(2) at any temperature up to 549 K, and upper limits of ca. 10(-14) cm(3) molecule(-1) s(-1) were set for the rate coefficients. A rate coefficient of (1.33 +/- 0.04) x 10(-10) cm(3) molecule(-1) s(-1) was also obtained for GeH(2) + MeGeH(3) at 296 K. No reaction was found between GeMe(2) and MeGeH(3). Rate coefficient comparisons showed, inter alia, that in the substrate germane Me-for-H substitution increased the magnitudes of rate coefficients significantly, while in the germylene Me-for-H substitution decreased the magnitudes of rate coefficients by at least four orders of magnitude. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) supported these findings and showed that the lack of reactivity of GeMe(2) is caused by a positive energy barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper.

Using a laser flash photolysis/laser probe technique, we report the observation of strong absorption signals in the wavelength region 450-520 nm (highest intensity at 514.5 nm) from four potential precursors of dimethylstannylene, SnMe(2), subjected to 193 nm UV pulses. From GC analyses of the gaseous products, combined with quantum chemical excited state CIS and TD calculations, we can attribute these absorptions largely to SnMe(2), with SnMe(4) as the cleanest source of the species. Kinetic studies have been carried out by time-resolved monitoring of SnMe(2). Rate constants have been measured for its reactions with 1,3-C(4)H(6), MeC[triple bond]CMe, MeOH, 1-C(4)H(9)Br, HCl, and SO(2). No evidence could be found for reaction of SnMe(2) with C(2)H(4), C(3)H(8), Me(3)SiH, GeH(4), Me(2)GeH(2), or N(2)O. Limits of less than 10(-13) cm(3) molecule(-1) s(-1) were set for the rate constants for these latter reactions. These measurements showed that SnMe(2) does not insert readily into C-H, Si-H, Ge-H, C-C, Si-C, or Ge-C bonds. It is also unreactive with alkenes although not with dienes or alkynes. It is selectively reactive with lone pair donor molecules. The possible mechanisms of these reactions are discussed. These results represent the first visible absorption spectrum and rate constants for any organo-stannylene in the gas phase.

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Time-resolved studies of silylene, SiH2, and dimethylsilylene, SiMe2, generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to obtain rate constants for their bimolecular reactions with dimethylgermane, Me2GeH2, in the gas phase. SiMe2 + Me2GeH2 was studied at five temperatures in the range 299-555 K. Problems of substrate UV absorption at 193 nm at temperatures above 400 K meant that only three temperatures could be used reliably for rate constant measurement. These rate constants gave the Arrhenius parameters log(A/cm3 molecule(-1) s(-1)) = -13.25 +/- 0.16 and E(a) = -(5.01 +/- 1.01) kJ mol(-1). Only room temperature studies of SiH2 were carried out. These gave values of (4.05 +/- 0.06) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + Me2GeH2 at 295 K) and also (4.41 +/- 0.07) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + MeGeH3 at 296 K). Rate constant comparisons show the surprising result that SiMe2 reacts 12.5 times slower with Me2GeH2 than with Me2SiH2. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) of the model Si-H and Ge-H insertion processes of SiMe2 with SiH4/MeSiH3 and GeH4/MeGeH3 support these findings and show that the lower reactivity of SiMe2 with Ge-H bonds is caused by a higher secondary barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper. Other, related, comparisons of silylene reactivity are also presented.