The paper presents an original method for contactless express measurement of parameters of thermoelectric materials. The presence of a combination of AC and DC magnetic fields in the gap of the oscillating circuit, where the monitored sample of the thermoelectric material is located, leads — due to Ampère force — to delamination of geometric regions of the occurrence of half-cycles of Foucault current. This in turn causes the appearance of additional heat losses in the oscillating circuit caused by Peltier effect. Computer modeling of these processes with the use of the software package ComsolFenlab 3.3 allowed determining the nature and magnitude of the electric currents in oscillating circuit, the range of operating frequencies, and the ratio of amplitudes of the variable and fixed components of the magnetic field. These components eventually cause a certain temperature difference along the controlled sample, which difference is proportional to the thermoelectric figure of merit Z of the material. The basic expressions are obtained for determining the value of the Seebeck coefficient a, thermal conductivity χ, electrical conductivity σ and thermoelectric figure of merit Z. A description is given to the design of the device for contactless express measurement of parameters of thermoelectric materials based on Bi—Te—Se—Sb solid solutions. Its distinctive feature is the ability to determine the symmetric and asymmetric components of the electric conductivity of the material values. The actual error in parameter measurement in this case is 2%.
1 Èíñòèòóò òåðìîýëåêòðè÷åñòâà ÍÀÍ è ÌÎÍ Óêðàèíû; 2 ×ÍÓ èì. Þ. Ôåäüêîâè÷à ÌÎÍ Óêðàèíà, 3 ÎÀÎ "Êâàðö" (ã. ×åðíîâöû, Óêðàèíà) AshcheulovAA@rambler.ru ÂÈÕÐÅÒÎÊÎÂÛÉ ÌÅÒÎÄ ÊÎÍÒÐÎËß ÏÀÐÀÌÅÒÐΠÒÅÐÌÎÝËÅÊÒÐÈ×ÅÑÊÈÕ ÌÀÒÅÐÈÀËΠÀ. À. Àùåóëîâ, È. À. Áó÷êîâñêèé, È. Ñ. Ðîìàíþê, Ä. Ä. Âåëè÷óê Àííîòàöèÿ. Ïîêàçàíû âîçìîaeíîñòè ìåòîäà è óñòðîéñòâà âèõðåòîêîâîãî êîíòðîëÿ îñíîâíûõ ïàðàìåòðîâ òåðìîýëåêòðè÷åñêèõ ìàòåðèàëîâ, ïðèâåäåíû èõ êðàòêèå õàðàêòåðèñòèêè. Êëþ÷åâûå ñëîâà: âèõðåâîé òîê Ôóêî, òåðìîýëåêòðè÷åñêèé ìàòåðèàë, òåðìîÝÄÑ, òåïëîïðîâîäíîñòü, ýëåêòðîïðîâîäíîñòü, òåðìîýëåêòðè÷åñêàÿ ýôôåêòèâíîñòü ÂÈÕÐÎÑÒÓÌÎÂÈÉ ÌÅÒÎÄ ÊÎÍÒÐÎËÞ ÏÀÐÀÌÅÒв ÒÅÐÌÎÅËÅÊÒÐÈ×ÍÈÕ ÌÀÒÅвÀ˲ À. À. Àùåóëîâ, ². À. Áó÷êîâñüêèé, ². Ñ. Ðîìàíþê, Ä. Ä. Âåëè÷óê Àíîòàö³ÿ. Ïîêàçàí³ ìîaeëèâîñò³ ìåòîäó ³ ïðèñòðîþ âèõðîñòðóìîâîãî êîíòðîëþ îñíîâíèõ ïàðàìåòð³â òåðìîåëåêòðè÷íèõ ìàòåð³àë³â, íàâåäåí³ ¿õ êîðîòê³ õàðàêòåðèñòèêè. Êëþ÷îâ³ ñëîâà: âèõðîâèé ñòðóì Ôóêî, òåðìîåëåêòðè÷íèé ìàòåð³àë, òåðìîÅÐÑ, òåïëîïðî-â³äí³ñòü, åëåêòðîïðîâ³äí³ñòü, òåðìîåëåêòðè÷íà åôåêòèâí³ñòüAbstract. Possibilities of method and device of Eddy current control of basic parameters of thermo-electric materials are first rotined, their short descriptions are showed.
Àííîòàöèÿ. Ðàññìîòðåíà âîçìîaeíîñòü èñïîëüçîâàíèÿ àíèçîòðîïíûõ îïòèêîòåðìîýëå-ìåíòîâ â êà÷åñòâå ñåíñîðîâ òåïëîâûõ ïîòîêîâ ïðåäíàçíà÷åííûõ äëÿ êîíòðîëÿ ãëóáèíû îõ-ëàaeäåíèÿ òåðìîýëåêòðè÷åñêèõ ìîäóëåé (ÒÝÌ) Ïåëüòüå. Abstract. Possibility is considered of the use of anisotropic optical-thermoelements as senor of thermal streams for control of depth of cooling of the thermo-electric modules (TEM) of Peltier in the conditions of their mass production.
Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors’ application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5—1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable. Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10—11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts. The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6—1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2•108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation.
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