The authors consider the aspects of electric current distribution in electrically conductive anisotropic medium and establish how geometrical factors affect its longitudinal and transverse components. In the case of an a×b×с rectangular plate, its selected crystallographic axes are located on the plane of the side face a×b, whereas one of these axes is oriented at an angle α to the edge a. Applying a certain potential difference to the upper and lower end faces of the plate causes the appearance of longitudinal and transverse components of the internal electric current. The paper demonstrates the possibility of transforming the magnitude of the electric current and a way to optimize this magnitude. The transformation coefficient of such a device is determined by the anisotropy of the electrical conductivity of the plate and the coefficient of its shape k = a/b. The authors consider a few versions of anisotropic dielectric transformer design and offer their equivalent electric circuits. Another suggested transformer design is spiral in shape, compact and is characterized by high transformation coefficient value n. For example, at external radius r1 = 12,5 mm, internal radius r2 = 2 mm, height b = 2 mm and plate thickness c = 2,0 mm, its transformation coefficient n = 103. The information is given on existing monocrystalline and artificial anisotropic materials that can be used for the proposed device. High-temperature superconducting materials characterized by a high value of residual resistance anisotropy hold special promise in this case. Using the described transformation effect will significantly expand the possibilities of practical application of the considered electroohmic phenomenon. This will lead to the emergence of a new generation of devices for microwave technology, electronics and power engineering.
Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors’ application on In2Hg3Te6 crystal base characterized by a photosensitivity in the spectral range of 0,5—1,6 mm and also by increased radiation resistance to alpha, beta and gamma radiation is most acceptable. Schottky photodiode structure was designed on the base of this semiconductor formed by a modified floating zone recrystallization technique where the sedimentation effect was leveled. It consists of n-In2Hg3Te6 substrate and deposited by cathode sputtering Cr barrier layer of thickness within a range 10—11 nm choice of Cr is determined by its optimal optical, electric and adhesive features in high quality radiation-resistant photodiode structures manufacturing. Indium and nichrome are used as ohmic contacts. The barrier structures have the contact area of 1,13 mm2 with photo response of 0,6—1,6 mm at the maximal sensitivity 0,43 A/W on the wavelength l,55 mm. Reverse dark current of these structures do not exceed 4 mA at the bias of 1 V (T=295 K), and the potential barrier height is equal to 0,41 eV. The tests of radiation resistance of these structures demonstrated their ability to function at doses of 2•108 rem without evident parameters changes. This allows using them in practical aims in the conditions of high radiation.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.