The Italian silicon-detectors-with-low-interaction-with material collaboration (SLIM5) has designed, fabricated and tested several prototypes of CMOS monolithic active pixel sensors (MAPS). This paper shows the design of a new mixed-mode chip prototype composed of a bidimensional matrix of pixels, and of an off-pixel digital readout sparsification circuit. The readout logic is based on commercial standard cells and implements an optimized non token readout technique. Also, a MAPS emulator software toool is presented. The project is aimed at overcoming the readout speed limit of future large-matrix pixel detectors for particle tracking, by matching the requirements of future high-energy physics experiments. The readout architecture extends the flexibility of the MAPS devices to be also used in first level triggers on tracks in vertex detectors
n-p-n bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates. A technology featuring a double implant for the emitter allowed us to obtain a typical current gain of about 600. The device has been tested with alpha particles from a Pu-239 source, beta particles from Sr-90, and X-rays from Am-241 using a simple experimental setup, where the detector is directly connected to the oscilloscope. In the case of electrons, pulse heights of 100 mV have been observed, with pulse length of 50 mu s, measured on a load resistor in series to the emitter. The parameters driving the time performance have been measured, obtaining a good agreement with the electrical model of the device. We report on the functional characterization of the device, in particular the time response, the energy calibration, and the electronic noise measurement
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