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The optical and electrical properties of thin film Fabri-Perrout interferometers on the base of VOz and AgzS are studied. The possibility of using of interferometers as optical limiters, femtosecond Q-switchers and materials for holograms recording is shown. The comparative analysis of the physical characteristics of films of the polycrystalline and amorphous vanadium dioxide. The morphology of films is studied on AFM-microscope. The phenomenological mechanisms of a hysteresis loop formation by metal -insulator phase transition and superionic conductor -insulator phase transition are discussed.