A quantitative measure of how much the inclusion of the conduction band-valence band coupling effects influence the band structure was obtained. The numerical results of two formalisms were derived using Finite Difference Method (FDM) where one formalism ignores the coupling effects between conduction and valence bands. It was found that the conduction band-valence band coupling effects significantly affects the band structure of typical InGaN Quantum Wells (QW) especially the conduction subbands.
Four InGaN-delta N Ga In y y 1 Quantum Wells (QW) with four different values of y (1, 0.9, 0.8, 0.7) were investigated through the numerical solution of a k.p Hamiltonian with the Finite Difference Method (FDM). The spontaneous emission spectra and optical gain spectra of the four structures have been found to have a definite pattern where increasing the value of y gradually shifted the spectra toward the higher energy regions. The electron-hole ground state overlaps were not found to change by a great amount. Increasing y brought about a predictable shift of the spectra toward the higher energy regions at the expense of electron-hole wave function overlap.
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