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In order to realize a high performance switching transistor, a new trench isolated t r a n s i s t o r w i t h s i d e -w a l l g a t e s h a s b e e n d e v e l o p e d , I n t h i s t r a n s i s t o r w i t h a triple-gate structure, the side-wall of the trench is used as an extra-channel region. T h e n e w e f f e c t s o f t r e n c h i s o l a t e d t r a n s i s t o r w i t h a t r i p l e -g a t e s t r u c t u r e have been described. The advantages of this transistor are excellent cutoff characteri s t i c s , a s m a l l s u b s t r a t e b i a s e f f e c t a n d h i g h r e l i a b i l i t y c h a r a c t e r i s t i c s . I t i s found that the side-wall gate along the c h a n n e l e d g e p l a y s a n i m p o r t a n t r o l e f o r increasing the gate controllability and for d e c r e a s i n g t h e c o n c e n t r a t i o n o f t h e electric field at the drain.

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