A new type of chalcogenide crystals Tl 4 SnS 3 , Tl 4 SnSe 3 , Tl 4 SnTe 3 easily processing by external IR laser light is fabricated. For the titled crystals linear electrooptical effect was induced by external IR polarized light formed by two coherent beams of Er:glass nanosecond laser at fundamental wavelength 1540 nm. The detection of the electrooptical coefficient was performed by continuouswave 1 W CO 2 laser at probing wavelength 10.6 lm. The origin of the effect is caused by an occurrence of the thin (up to 50 nm) photoexcited nanosheets which forms near the surface space charge density non-centrosymmetry. The relaxation of the electrooptics after switching off of the photoinduced Er:glass laser beam is explored for different types of samples at different power densities. The crystals may be used for IR optical triggering.
The crystal structure of the Tl 4 GeSe 4 compound was determined by X-ray single crystal diffraction. The title compound crystallizes with the Tl 4 SiSe 4 structure type (space group C2/c). The Tl + cations are coordinated by four separate [GeSe 4 ] 4anions, whereas the [GeSe 4 ] 4anion is surrounded by nine Tl + cations. Strengthening of the cation-anion interactions was observed with respect to the Si-compound.
The energy band structure, electronic charge density and optical features of Tl4PbSe3 and Tl4PbTe3 single crystals were studied within a framework of the recently modified Becke–Johnson potential (mBJ).
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