The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of SiO 2 in the composition of porous silicon material. [S0031-9007(97) PACS numbers: 44.30. + v, 61.43.Gt, 81.05.Cy, 81.05.Rm Since the discovery of its room-temperature visible luminescence [1][2][3][4][5], porous silicon (PS) has become a subject of considerable interest, especially for its promising use as an optoelectronic device [6,7]. There are several methods [8][9][10][11] for fabricating PS from crystalline silicon wafers. The electrochemical etching [1,8] is, however, the most extensively used so far. The morphology of the resulting porous layer is strongly dependent upon the fabrication controlling parameters such as electrolyte composition, current density, etching time, etc., as well as on the type of substrate used.In general, an electrochemically formed n-type PS layer consists essentially of a double-layer system on top of the silicon substrate [1,12]. The outermost thin layer, known as the microporous layer, is typically 10-15 mm thick and is responsible for the observed photoluminescence. Except for very small etching times, the inner layer adjacent to the crystalline substrate, designated as the macroporous layer, consists of a parallel array of airembedded free-standing n-PS columns.Despite the large body of literature that already exists on PS [13,14], so far there has been no reported detailed investigation of the thermophysical properties of this important system. In this Letter we apply the modern photothermal techniques to the evaluation of the thermal properties of electrochemically formed n-PS.The samples used in our experiments were prepared by electrochemical etching on (100) oriented, nondegenerated, n-type ͑2.1 3 10 18 cm 23 ͒ crystalline silicon. The samples had a thickness of roughly 300 mm and an electrical resistivity of 1-5 V cm. The electrochemical etching was carried out following the procedure outlined in Ref. [12]. The crystalline samples, with an appropriate Pt network electrode attached to them, were immersed in a 150 ml Becker filled with HF. A current density of 40 mA͞cm 2 was then applied to the samples using a HP-model 6206B dc power supply operating between 5-10 V. During the etching period the samples were always kept under the irradiation of a 250 W infrared lamp positioned roughly 20 cm away from the etching bath. By controlling the etching time, ranging from 10 to 83 min, we could fabricate samples with different macroporous thicknesses.In Fig. 1 we show the side view optical micrograph of a typical n-PS sample, produced with 60 min etching time. The three distinct regions mentioned above, namely, the microporous and macroporous layers on top of the crystalline sub...

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In this work, the problem of the thermal characterization of two-layer systems by means of the photoacoustic technique is discussed. For a two-layer system under rear-side illumination conditions, we have applied the Rosencwaig and Gersho model for calculating the pressure fluctuation in the photoacoustic gas chamber. The limiting cases in which both layers are thermally thin, thermally thick and one layer is thermally thin and the other is thermally thick are discussed. When both layers are thermally thin, a consistent equation for the heat capacity is obtained and an effective thermal diffusivity equation is derived when both layers are thermally thick. In order to test our theoretical results, we apply them to two-layer systems consisting of AlGaAs layers of different Al concentrations, grown by liquid phase epitaxy on GaAs substrates. The results of our measurements are in good agreement with the theoretical predictions. Our results show the general character of the expression for the effective thermal diffusivity of two-layer systems reported by Mansanares et al (1990 Phys. Rev. B 42 4477).

A non-separation approach to determine the spark-processed porous silicon thermal parameters is presented. This thermal characterization was performed through application of the photoacoustic technique, in combination with compositional models for spark-processed porous silicon samples. The thermal parameters obtained are in agreement with existing studies about the composition of this material. This approach opens the possibility of performing the thermal characterization of other porous semiconductors and analogous materials.

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Using the open photoacoustic cell technique we analyze, for a polycrystal CdTe/glass system, the dependence upon the photoacoustic signal phase of both the rear and front semiconductor carrier surface velocities and the bulk recombination time.

Using the photoacoustic technique the thermal diffusivity, thermal conductivity, and heat capacity of Cd1−xZnx Te in the range 0 < x < 0.3, have been determined. We have also monitored the crystalline quality of these systems through X‐ray diffraction measurements, in order to follow the influence of the structural properties and composition of the crystals on their thermal properties. It is shown that for Zn concentrations around 3%, an optimum heat transport and a minimum heat storage are observed.