Computer modeling of two-layer system from antiferromagnetic and ferromagnetic films is carried out. The Ising model is used. Wolf ′s cluster algorithm is used for calculations. Phase transition temperatures are determined. A state with an ordered antiferromagnetic film and a disordered ferromagnetic film is selected for examination. Dependence the ferromagnetic film magnetization on parameters of antiferromagnetic film is determined. Computer simulation of ferromagnetic film behavior in external magnetic field is performed. The value of the anti-ferromagnetic bias field is determined from the comparison these two experiments. The dependence of the bias field on the exchange integral value at the film boundary is determined.
Computer modeling of magnetization behavior of thin ferromagnetic Ising films separated by antiferromagnetic film was carried out. Metropolis’s algorithm was used for the simulation. Finite-dimensional scaling theory has been used. Phase transition temperatures were determined by Binder cummulants. Systems with different number of layers in ferromagnetic and antiferromagnetic film have been investigated. Temperatures of phase transitions in ferromagnetic and antiferromagnetic films are determined. A phase diagram of the system has been constructed. There are four phases on the phase diagram. Phase for implementation the spintronic devices is defined. The distribution of magnetization and chess magnetization across the layers of the system in different phases has been investigated.
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