Films of a new n‐type semiconducting lead oxide phase of approximate stoichiometry PbO1.50 are formed by reactive sputtering (lead metal target) in either a 100% O2 plasma or a 50:50 mixture of O2 and N2.
Cobalt oxide films, reactively sputtered in a 100% pure O2 plasma, display very different surface and bulk oxygen‐to‐cobalt ratios with the bulk being oxygen‐deficient, whereas the surface contains oxygen in excess.
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