Autocorrelation measurements are used to reveal the spectral diffusion time scale in the single photon emission of a GaN interface fluctuation quantum dot. Typical characteristic diffusion times of such QDs are revealed to be of nanosecond order. The excitation power dependence of the diffusion rate is also investigated, whereby an increase in the diffusion rate with increasing excitation power is observed. This result provides information on experimental conditions that will be required for the generation of indistinguishable photons.
We study the coherent dynamics of localized excitons in 100-periods of 2.5 nm thick (In,Ga)N/GaN quantum wells with 7.5% indium concentration, measured with spectroscopic resolution through two-pulse and three-pulse photon echoes at the temperature of 1.5 K. A long-lived coherent exciton dynamics is observed in the (In,Ga)N quantum wells: When the laser photon energy is tuned across the 43 meV-wide inhomogeneously broadened resonance line, the coherence time T2 varies between 45 and 255 ps, increasing with stronger exciton localization. The corresponding narrow homogeneous linewidths ranging from 5.2 to 29 µeV as well as the relatively weak exciton-phonon interaction (0.8 µeV/K) confirm a strong, quantum dot-like exciton localization in a static disordered potential inside the (In,Ga)N quantum well layers.
Exciton-polaritons in planar waveguides are of great interest for application in polariton circuits due to the large polariton group velocity in the plane of the waveguide. We demonstrate the ability to control the exciton-polariton coupling by light in an AlGaAs-based planar waveguide with GaAs/AlGaAs quantum well. The transition between strong and weak coupling regimes observed with increasing light intensity is explained by the increase in exciton mode losses due to the quantum well charging. This assumption is confirmed by the reflection spectroscopy with resonant illumination.
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