High-quality MnSe(111) film was bilayer-by-bilayer grown epitaxially onto the Bi 2 Se 3 (111) surface using molecular beam epitaxy. Reversal scenario with quintuple layer-by-layer growth of Bi 2 Se 3 onto the MnSe film was also realized. Angle-resolved photoemission spectroscopy measurements of Bi 2 Se 3 capped with two bi-layers of MnSe revealed that an energy gap of about 90 meV appears at the Dirac point of the original Bi 2 Se 3 surface, possibly due to breaking the time-reversal symmetry on the Bi 2 Se 3 surface by magnetic proximity effect from MnSe. V
Using molecular beam epitaxy, InSe films of thicknesses from one to six quadruple layers were grown on Si(111). The surface morphology and structure of the InSe films were monitored using reflection high-energy electron diffraction and scanning tunneling microscopy observations. Angle resolved photoemission experiments revealed that the bulk-like parabolic shape of the valence band of InSe/Si(111) changes for the so-called “Mexican hat” shape when the thickness of the InSe film reduces to one and two quadruple layers. The observed effect is in a qualitative agreement with the reported calculation results on the free-standing InSe films. However, in the InSe/Si(111) system, the features used to characterize the Mexican hat dispersion appear to be more pronounced, which makes the one- and two-quadruple InSe layers on Si(111) promising candidates as thermoelectric materials.
Thin films of rhombohedral Sb2Se3 with thicknesses from 1 to 5 quintuple layers (QL) were grown on Bi2Se3/Si(1 1 1) substrate. The electronic band structure of the grown films and the Sb2Se3/Bi2Se3 interface were studied using angle-resolved photoemission spectroscopy. It was found that while Sb2Se3 has an electronic band structure generally similar to that of Bi2Se3, there is no fingerprints of band inversion in it. Instead, the one-QL-thick Sb2Se3 films show direct band gap of about 80 meV. With growing film thickness, the Fermi level of the Sb2Se3 films gradually shifts by 200 meV for 5 QL-thick film revealing the band bending of the Sb2Se3/Bi2Se3 hetero-junction.
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