A 20V submicron BCDMOS process is presented with extended LDMOS SOA (Safe-Operating-Area) for smart power applications by optimizing body-current. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier injection phenomenon. The first peak shows the appearance of weakly impact ionization related to the device degradation and the second peak shows the occurrence of snap-back phenomenon predicting device destruction, respectively. In the present paper, we investigated the HE-SOA (Hot-Electron-Limited SOA) and Electrical SOA using two peaks of body current in LDMOS transistors with submicron BCD process.
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