The 5.98 inch-sized World's first flexible OLED display has been developed and launched mass production on smartphone with extremely light, thin and curved shape, successfully. We have employed ELA-TFT on PI backplane, Face-sealing encapsulation, Laser-assisted glass release and flexible backplate lamination process. These technologies enable panel reliability as well as mass production with inherent flexible display characteristics. For commercializing flexible OLED, technical barriers and challenges on TFT device, panel design and various process technologies including LG Display's recent experience will be presented in this paper.
We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) using the pseudo-CMOS structure. The DG BCE a-IGZO TFTs exhibit field-effect mobility (µ FE ), threshold voltage (V th ), and subthreshold swing of 30 ± 3 cm 2 /Vs, 2 ± 0.5 V, and 120 ± 30 mV/decade, respectively. For input voltage (V DD ) of 20 V, seven-stage pseudo-CMOS ring oscillators implemented with the BCE bulk-accumulation a-IGZO TFTs show oscillation frequency of 6.51 MHz, which corresponds to a propagation delay time of 11 ns/stage and is faster than the 17 ns/stage delay of the fastest single-gate-driven ratioed coplanar a-IGZO TFT circuits.
IndexTerms-a-IGZO TFTs, bulk accumulation, pseudo-CMOS, ring oscillator.
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