Ambient stability of colloidal nanocrystal quantum dots (QDs) is imperative for low-cost, high-efficiency QD photovoltaics. We synthesized air-stable, ultrasmall PbS QDs with diameter (D) down to 1.5 nm, and found an abrupt transition at D ≈ 4 nm in the air stability as the QD size was varied from 1.5 to 7.5 nm. X-ray photoemission spectroscopy measurements and density functional theory calculations reveal that the stability transition is closely associated with the shape transition of oleate-capped QDs from octahedron to cuboctahedron, driven by steric hindrance and thus size-dependent surface energy of oleate-passivated Pb-rich QD facets. This microscopic understanding of the surface chemistry on ultrasmall QDs, up to a few nanometers, should be very useful for precisely and accurately controlling physicochemical properties of colloidal QDs such as doping polarity, carrier mobility, air stability, and hot-carrier dynamics for solar cell applications.

The fast degradation of lead selenide (PbSe) nanocrystal quantum dots (NQDs) in ambient conditions impedes widespread deployment of the highly excitonic, thus versatile, colloidal NQDs. Here we report a simple in situ post-synthetic halide salt treatment that results in size-independent air stability of PbSe NQDs without significantly altering their optoelectronic characteristics. From TEM, NMR, and XPS results and DFT calculations, we propose that the unprecedented size-independent air stability of the PbSe NQDs can be attributed to the successful passivation of under-coordinated PbSe(100) facets with atomically thin PbX2 (X = Cl, Br, I) adlayers. Conductive films made of halide-treated ultrastable PbSe NQDs exhibit markedly improved air stability and behave as an n-type channel in a field-effect transistor. Our simple in situ wet-chemical passivation scheme will enable broader utilization of PbSe NQDs in ambient conditions in many optoelectronic applications.

We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p–n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays.

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Unveiling the atomistic surface structure of colloidal quantum dots may provide the route to rational design of highly performing III–V nanocrystals with control over energy levels position, surface energy, trap passivation, and heterojunction interface.

We present a one-step layer deposition procedure employing ammonium iodide (NH4I) to achieve photovoltaic quality PbS quantum dot (QD) layers. Ammonium iodide is used to replace the long alkyl organic native ligands binding to the QD surface resulting in iodide terminated QDs that are stabilized in polar solvents such as N,N-dimethylformamide without particle aggregation. We extensively characterized the iodide terminated PbS QD via UV-vis absorption, transmission electron microscopy (TEM), thermogravimetric analysis (TGA), FT-IR transmission spectroscopy, and X-ray photoelectron spectroscopy (XPS). Finally, we fabricated PbS QD photovoltaic cells that employ the iodide terminated PbS QDs. The resulting QD-PV devices achieved a best power conversion efficiency of 2.36% under ambient conditions that is limited by the layer thickness. The PV characteristics compare favorably to similar devices that were prepared using the standard layer-by-layer ethandithiol (EDT) treatment that had a similar layer thickness.

Controlling the thickness of quantum dot (QD) films is difficult using existing film formation techniques, which employ pre-ligand-exchanged PbS QD inks, because of several issues: 1) poor colloidal stability, 2) use of high-boiling-point solvents for QD dispersion, and 3) limitations associated with one-step deposition. Herein, we suggest a new protocol for QD film deposition using electrical double-layered PbS QD inks, prepared by solution-phase ligand exchange using methyl ammonium lead iodide (MAPbI3). The films are deposited by the supersonic spraying technique, which facilitates the rapid evaporation of the solvent and the subsequent deposition of the PbS QD ink without requiring a post-deposition annealing treatment for solvent removal. The film thickness could be readily controlled by varying the number of spraying sweeps made across the substrate. This spray deposition process yields high-quality n-type QD films quickly (within 1 min) while minimizing the amount of the PbS QD ink used to less than 5 mg for one device (300-nm-thick absorbing layer, 2.5 × 2.5 cm2). Further, the formation of an additional p-layer by treatment with mercaptopropionic acid allows for facile hole extraction from the QD films, resulting in a power conversion efficiency of 3.7% under 1.5 AM illumination.

Indium antimonide (InSb), a narrow band gap III-V semiconductor is a promising infrared-active material for various optoelectronic applications. Synthetic challenge of colloidal InSb nanocrystals (NCs) lies in the limited choice of precursors. Only a few successful synthetic schemes involving highly toxic stibine (SbH3) or air- and moisture-sensitive metal silylamides (In[N(Si-(Me)3)2]3 or Sb[N(Si-(Me)3)2]3) as the precursor have been reported. We found that commercially available precursors InCl3 and Sb[NMe2]3 directly form highly crystalline colloidal InSb nanocrystals in the presence of a base such as LiN(SiMe3)2 or nBuLi. The mean size of the particles can be controlled by simply changing the activating base. This approach offers a one-pot synthesis of InSb NCs from readily available chemicals without the use of complex organometallic precursors.