Carnitine and carnitine-lipoic acid prevent lipotoxicity by increasing mitochondrial β-oxidation and reducing intracellular oxidative stress.

Here, we report a successfully modified Czochralski process system by introducing the cooling system and subsequent examination of the results using crystal growth simulation analysis. Two types of cooling system models have been designed, i.e., long type and double type cooling design (LTCD and DTCD) and their production quality of monocrystalline silicon ingot was compared with that of the basic type cooling design (BTCD) system. The designed cooling system improved the uniformity of the temperature gradient in the crystal and resulted in the significant decrease of the thermal stress. Moreover, the silicon monocrystalline ingot growth rate has been enhanced to 18% by using BTCD system. The detailed simulation results have been discussed in the manuscript. The present research demonstrates that the proposed cooling system would stand as a promising technique to be applied in CZ-Si crystal growth with a large size/high pulling rate.

In this paper, we report a successfully modified single-crystal Si growth furnace for impurity control. Four types of arbitrary magnetic heater (AMGH) systems with 3, 4, 5, and poly parts were designed in a coil shape and analyzed using crystal growth simulation. The concentration of oxygen impurities in single-crystal Si ingots was compared among the designed AMGHs and a normal graphite heater (NGH). The designed AMGHs were confirmed to be able to control turbulence and convection in a molten state, which created a vortex that influenced the oxygen direction near the melt–crystal interface. It was confirmed that replacing NGH with AMGHs resulted in a reduction in the average oxygen concentration at the Si melt–crystal interface by approximately 4.8%.