Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C.
The effect of thiourea on the electrochemical nucleation of tin on a copper substrate from a sulfate bath was studied using voltammetry, chronoamperometry, electrochemical impedance spectroscopy, and scanning electron microscopy. Without thiourea, electrodeposition of tin showed very poor surface coverage. However, re-nucleation and growth of tin occurred after the addition of thiourea. In particular, very rapid re-nucleation and growth behavior of tin were observed when up to 6 g/L of thiourea was added. Furthermore, impedance analysis allowed the estimation of the change in the growth behavior of tin when up to 6 g/L of thiourea was added.
Dynamic left ventricular (LV) outflow tract obstruction is a characteristic feature of hypertrophic cardiomyopathy; however, it can also occur in association with hyperdynamic LV contraction and/or changes in the cardiac loading condition, even in a structurally normal or near-normal heart. Here, we report a case of anemia-induced systolic anterior motion of the mitral valve and the resultant intraventricular obstruction in a patient who underwent coronary artery bypass grafting and suffered from anemia associated with recurrent gastrointestinal bleeding.
The copper thin films were deposited by Atomic layer deposition (ALD) on a ruthenium depending on the substrate temperatures. The substrate deposited Ru and TaN on SiO2 by plasma enhanced ALD (PEALD) before Cu deposition for an adhesion layer between Si and Cu. The copper thin films were deposited 200 cycles. The thickness of Cu was different depending on the substrate temperatures. The properties of copper thin films were investigated by a 4 point probe, SEM, and AFM. TaN and Ru layers were deposited by plasma enhanced ALD (PEALD) for the adhesion layer. Also, TaN and Ru layers were observed as TEM because the thickness was too thin. The thickness and roughness of Cu thin film increased depending on the deposition temperatures but, Cu thin film was not deposited at 110 °C. The best sheet resistance of the copper thin film was obtained at a deposition temperature of 170 °C.
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