A novel method, called random telegraphy signal (RTS), was constructed to characterize the gate oxide quality and reliability of metal-oxide-semiconductor field-effect-transistors (MOSFETs). With the aggressive scaling of device size, drain current RTS (I D -RTS) become a critical role in carrier transport of MOSFETs. Besides, RTS in gate leakage current (I G -RTS) was denoted as the other new method to understand property of gate oxide. Recently, the study of RTS has also been made in MOSFETs with metal gate and high dielectric constant (metal gate/high-k). However, the RTS in partial depleted silicon-on-insulator MOSFETs (PD SOI MOSFETs) has not comprehensively been studied yet. This paper investigates RTS characteristics in PD SOI MOSFETs. IntroductionSilicon on insulator (SOI) MOSFETs have been attracted huge attention recently because of it lower power consumption, good soft-error immunity, increased circuit packing density and absence of CMOS latch-up (1-5). However, the self-heating effect (6-7) and floating body effect (FBE) (9) are the inherent disadvantages in SOI devices. In conventional FBE is attributed to the excess hole were generated by impact ionization in saturation region with floating body condition. The new FBE is in linear region, called gate-induced floating-body effect (GIFBE) due to the aggressive scaling gate oxide thickness induced by gate tunneling current (10-12, 25). Similarly, when device scale down to deep sub-micrometer the random telegraph noise (RTN) or so-called random telegraph signal (RTS) will be observed and influence device dynamic performance (8,22). The RTS phenomenon is commonly related to a carrier capture and emission behaviors. Recently, RTS has been considered as a major concern in scaling digital device because fluctuation of drain current amplitude (ΔI D ) will disturb analysis of signal (13-15). In the deep sub-micrometer MOSFETs device, it is possible to exist one or few oxide traps near the SiO2/Si interface which were distributed over the vicinity of Si surface Fermi level. These traps can be investigated by RTS (16). The high and low level states of drain current (I D ) vary randomly with time, which correspond to the carrier capture and emission at an oxide trap near the SiO2/Si interface. The average time at high level state of drain current corresponds to average capture time < τ c > which means how long will carrier be captured into the trap. On the other hand, the average time at low level state of drain current corresponds to average emission time < τ e > represent how
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