The objective of this study is to investigate the effect of long-term static bending on the conductive characteristics of indium tin oxide (ITO) thin film in flexible optoelectronics. Two types of substrate are considered, namely ITO on polyethylene naphthalate (ITO/PEN) and ITO on polyethylene terephthalate (ITO/PET). Electrical properties of the ITO/PEN and ITO/PET sheets are measured in situ under static bending at various radii of curvature. Experimental results indicate that no significant change in electrical resistance of the ITO/PEN and ITO/PET sheets is found for compressive bending after 1000 h at a curvature radius of 10 mm or larger. However, the ITO/PEN and ITO/PET sheets are seriously damaged under a tensile bending of 10 mm radius and 5 mm radius, respectively. The given ITO/PET sheet exhibits a greater resistance to long-term mechanical bending than the ITO/PEN one, which is attributed to the effect of stiffness and thickness of substrate. As the given PET substrate has a lower stiffness and thickness than the PEN one, ITO thin film in the ITO/PET sheet has a smaller stress given a bending radius. Consequently, a smaller extent of change in the electrical conductance of ITO thin film is found in the ITO/PET sheet.

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Abstract:The objective of this study is to investigate the effect of long-term static bending on the encapsulation properties of a commercial barrier thin film for flexible optoelectronic devices. Encapsulation properties of the barrier film are evaluated under long-term static bending at various radii of curvature. Experimental results reveal that no significantly detrimental effect on the water vapor transmission rate (WVTR) at 40 • C and 90% RH is found for compressive bending up to 1000 h and for tensile bending up to 100 h with a radius of curvature of 5 mm or larger. However, WVTR of the barrier thin film is significantly increased and cracks are found in the barrier film when subjected to tensile bending of a radius of 10 mm or 5 mm for 1000 h. The expected WVTR of the given barrier thin film is numerically computed using a three-dimensional (3D) finite element model. Numerical results indicate that, with the presence of cracks in the barrier thin film, the WVTR increases for an apparent increase in moisture entrances. The WVTR calculated by the 3D cracking model concurs with the experimental results.