Atomic layer deposition (ALD) is utilized to grow high performance aluminum oxide (Al2O3) barrier films on flexible PET substrates, where the effects of precursor pulse time and deposition temperature on the film properties are also studied in this work. Significant differences are observed that the water vapor transmission rate of the PET substrate is largely improved by coating the Al2O3 barrier films. Further observations on the surface roughness, optical transmittance, adhesion, mechanical properties of the deposited films are also conducted. The results show that the Al2O3 film deposited with 10 msec precursor pulse time and 60°C deposition temperature behaves the best performance.
This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.