The amazing properties of 2D materials are envisioned to revolutionize several domains such as flexible electronics, electrocatalysis, or biosensing. Herein we introduce scanning electrochemical microscopy (SECM) as a tool to investigate molybdenum disulfide in a straightforward fashion, providing localized information regarding the electronic transport within chemical vapor deposition (CVD)‐grown crystalline MoS2 single layers having micrometric sizes. Our investigations show that within flakes assemblies some flakes are well electrically interconnected, with no detectable contact resistance, whereas others are not electrically connected at all, independent of the size of the physical contact between them. Overall, the work shows how the complex electronic behavior of MoS2 flake assemblies (semiconducting nature, contact quality between flakes) can be investigated with SECM.
Dielectric films
with nanometer thickness play a central role in
the performances of field effect transistors (FETs). In this article,
a new class of organic gate dielectric based on the electrochemical
grafting of diazonium salts on metallic electrodes is investigated.
The versatile diazonium salt strategy is a local and room-temperature
process that provides robustness and performances. Moreover, this
process produces ultrathin (4–8 nm) and smooth films. To prove
their efficiency as gate dielectric, they were integrated in MoS2–FETs gate stacks. The devices display excellent switching
behavior for reduced gate bias swing (down to 1 V) and suppressed
hysteresis thanks to the highly hydrophobic nature of the fluorinated
grafted film. Furthermore, the devices exhibit steep subthreshold
slopes (as low as 110 mV/decade), demonstrating excellent gate coupling.
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