In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm 2 V −1 s −1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/ f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

A multi-stage thin film transistor (TFT)-based active pixel sensor (APS), capable of successfully detecting small impulses of charge resulting from incident alpha particle strikes, is presented. Detection of alpha particles is important in the field of neutron detection, where fully integrated thin-film-based detectors are an attractive alternative to conventional 3 He-based proportional counters owing to their low-cost and large-area scaling capability, combined with the use of readily available materials. A typical TFT process, however, produces only N-type devices with low electron mobilitiesmaking high-gain CMOS amplifier designs unfeasible. The disadvantages of using a TFT-only APS design are mitigated by cascading multiple low-gain TFT amplifiers, which results in a higher overall pixel gainsubsequently allowing for the successful detection and readout of alpha particle strikes. Presented is a new APS fabricated in an indium gallium zinc oxide TFT process is presented, and successful initial alpha response measurements are reported.

We present the case of a 59-year-old male with massive hemoptysis secondary to a bronchopulmonary artery fistula formed as the result of a perihilar lung cancer. The hemoptysis was successfully treated by Amplatzer Plug (St. Jude Medical) embolization of the supplying pulmonary artery branch. At the same time, bronchoscopy was performed to tamponade the patients bleeding and avoid exsanguination. Biopsy of the mass demonstrated poorly differentiated non small cell carcinoma. Post procedure day 13 the patient underwent staging with PET CT which showed localized disease. His hemoptysis resolved.

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It is shown that an array of D-dot sensors can be implemented to not only detect, but for the first time, image very low-frequency electric fields. D-dot sensors sense current proportional to the time derivative of the electric field. The signal of interest is extracted from each D-dot pixel using a lock-in amplifier through an automated multiplexer. We have successfully rendered very low-frequency electric field images from energized wires using the proposed electric field imager. As a proof-of-concept, the arrays were fabricated on both a printed circuit board and a flexible polyethylene naphthalate substrate, the latter of which incorporates a thin-film transistor process. Such a device will have commercial and industrial applications, such as imaging sources of electromagnetic interference as well as security applications for noninvasive monitoring.Index Terms-Electric fields, imaging, very low frequency, sensor array, D-dot sensor, flexible electronics.