gathered lots of attention due to gate tunability and signal amplification for flexible active-matrix sensing. [8][9][10] In the previous studies of OPTs, the interface engineering of polymeric dielectrics offers an effective approach to modulate the performance of the devices. [11][12][13] As one of the representatives of polymeric dielectrics for modulation, aromatic polyimide (PI) has become a promising candidate for gate dielectric layer with good feasibility for fabrication of organic electronic devices due to its excellent thermal stability, chemical resistance, and mechanical flexibility. [14][15][16][17] However, in our previous work, we found that the weak van der Waals interaction between the PI (KAPTON) chains led to a flat 2D structure at the interface resulting in the disorder molecular stacking of planar molecules for low mobility. [18] To this end, the functionalization of PI with selfassembly monolayer could improve the mobility by an order of magnitude with a value up to 0.462 cm 2 V −1 s −1 . [19] Besides, the incorporation of fluorine functional groups into PI molecules will enhance its surface hydrophobicity and reduce the surface energy of the interface. [20][21][22] Furthermore, due to the chemical inertia, hydrophobicity, and low polarizability of CF bond, the adsorption of water and oxygen molecules in the air can be inhibited by fluorinated PI, resulting in the reduction of the polarity of It is generally believed that the incorporation of fluorine functional groups into dielectrics can effectivelyimpede the charge-trapping process and improve carrier mobility. However, the relationship between the device performance and fluorinated groups is still not clear and also the modulation effect of fluorine functional groups on photogenerated charge carrier in phototransistors has not yet been investigated. Herein, phototransistors are constructed by using three kinds of gate dielectric layers with different fluorinated groups to exploit the effect of fluorine functional groups. It is concluded that the presence of fluorinated groups indeed increases the transistor mobility and optical figures of merit in phototransistors compared to the device with a fluorine-free dielectric layer. Concurrently, the exciton binding energy is increased with the addition of fluorinated groups, resulting in the decrease of phototransistor performance compared with less content of fluorinated groups due to the synergistic balance effect of fluorine functional groups. The results further clarify how the fluorine functional groups optimize the interface of organic phototransistors and modulate the photoelectric performance.
Fluorinated dielectric‐based organic field effect transistors (OFETs) have garnered lots of attention due to some visible superiorities of the incorporation of fluorine functional groups into dielectrics, such as the hydrophobicity, chemical inertness, and low polarizability of the C─F bond for effectively impeding the charge‐trapping process and improving carrier mobility. With the efforts of material design and device optimization, high‐performance multifunctional devices using fluorinated dielectrics have been rapidly developed with the mobility exceeding 8 cm2 V−1 s−1 and the operating voltage lower than −4 V, which provides a promising opportunity for applications in memory devices, wearable electronics, and flexible sensors. On this basis, this review summarizes the recent development of fluorinated dielectric‐based OFETs and OFETs‐based organic optoelectronic devices. In addition, a brief perspective of fluorinated dielectric‐based OFETs and their future challenges is also presented.
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