Oxygen vacancies often determine the electronic structure of metal oxides, but existing techniques cannot distinguish the oxygen-vacancy sites in the crystal structure. We report here that time-resolved optical spectroscopy can solve this challenge and determine the spatial locations of oxygen vacancies. Using tungsten oxides as examples, we identified the true oxygen-vacancy sites in WO2.9 and WO2.72, typical derivatives of WO3 and determined their fingerprint optoelectronic features. We find that a metastable band with a three-stage evolution dynamics of the excited states is present in WO2.9 but is absent in WO2.72. By comparison with model bandstructure calculations, this enables determination of the most closely neighbored oxygen-vacancy pairs in the crystal structure of WO2.72, for which two oxygen vacancies are ortho-positioned to a single W atom as a sole configuration among all O─W bonds. These findings verify the existence of preference rules of oxygen vacancies in metal oxides.
Investigation into the temperature dependence of the mechanical behavior of ultra‐coarse grained cemented carbide materials is highly demanded due to its service conditions of concurrent applied stress and high temperature. In the present study, based on the designed experiments and microstructural characterization combined with crystallographic analysis, the evolution of slip systems, motion and interaction of dislocations with temperature are quantified for the WC hard phase. Mechanisms are proposed for the formation of the sessile dislocations in the main slip systems at the room temperature and the glissile dislocations in the new slip systems activated at high temperatures. Furthermore, the correlation of the plastic strain and fracture toughness with the temperature‐dependent slip activation, dislocation reaction and transformation is explained quantitatively. Enlightened by the present findings, potential approach to enhance the high‐temperature strength of ultra‐coarse cemented carbides based on WC strengthening was suggested.
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