Although
pyroelectric photodetectors have been intensively studied,
the transient temperature change rate of pyroelectric materials is
a main restrictive factor for improving the performance. In this work,
we fabricate an ultrafast response self-powered near-infrared (NIR)
photodetector (PD) based on Au nanoparticles (NPs) coated an n-ZnO
nanowires (NWs)/p-Si heterojunction. The local surface plasmon resonance
(LSPR) effect generated at the local contacts of Au NPs/ZnO NWs can
significantly enhance the transient temperature change rate of the
ZnO material to improve the photoresponse performances of the NIR
PD. Compared with that in the pristine ZnO-based PD, the response
time of the Au-coated NIR PD is decreased from 113 to 50 μs
at the rising edge and 200 to 70 μs at the falling edge. Optical
responsivity and detectivity of the Au-coated ZnO-based PD are increased
by 212 and 266%, respectively. The pyroelectric current gain is produced
by injecting hot electrons from the LSPR effect of Au NPs into the
ZnO material and the thermal energy transfer caused by the photothermal
effect of plasmonic Au nanostructure. This work provides an in-depth
understanding of plasmonic effect-enhanced pyroelectric effect and
presents a unique strategy for developing high-performance NIR photodetectors.
The exceptional optical and electronic properties of all-inorganic cesium lead bromide (CsPbBr 3 ) perovskite make it an ideal new optoelectronic material, but low surface coverage limits its performance. The morphological characteristics of thin films have a great influence on the performance of perovskite light emitting diodes, especially at low coverage, and an inhomogeneous surface will lead to current leakage.To tackle this problem, the widespread adoption of composite layers including polymers poly(ethylene oxide) (PEO) and organic insulating poly(vinylpyrrolidone) (PVP) and all-inorganic perovskites is an effective way to increase the surface coverage and uniformity of perovskite films and improve the performance of perovskite light emitting devices. In our work, the perovskite thin films are investigated by using PEO and PVP dual additives, and the optimized CsPbBr 3 -PEO-PVP LED with maximum luminance, current efficiency, and external quantum efficiency of 2353 cd m À2 (at 7.2 V), 2.14 cd A À1 (at 6.5 V) and 0.85% (at 6.5 V) was obtained. This work indicates that the method of using additives is not only the key to enhancing the quality of perovskite thin film, but also the key to achieving a higher performance perovskite LED.
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