AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1−xN}/AlN, (b) Thin-GaN/3 × {AlxGa1−xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross section transmission electron microscopy, optical microscopy, atomic-force microscopy, cathodoluminescence, Raman spectroscopy, X-ray diffraction (ω/2θ scan and symmetric/asymmetric ω scan (rocking curve scan), reciprocal space mapping) and Hall effect measurements are employed to study the structural, optical, and electrical properties of these AlGaN/GaN HEMT structures. The effects of buffer layer stacks (i.e. thickness and content) on defectivity, stress, and two-dimensional electron gas (2DEG) mobility and 2DEG concentration are reported. It is shown that 2DEG characteristics are heavily affected by the employed buffer layers between AlGaN/GaN HEMT structures and Si(111) substrates. Particularly, we report that in-plane stress in the GaN layer affects the 2DEG mobility and 2DEG carrier concentration significantly. Buffer layer engineering is shown to be essential for achieving high 2DEG mobility (>1800 cm2/V∙s) and 2DEG carrier concentration (>1.0 × 1013 cm−2) on Si(111) substrates.
Here we study and correlate structural, electrical, and optical properties of three GaN samples: GaN grown by metalorganic chemical vapor deposition on sapphire (GaN/Al2O3), freestanding GaN crystals grown by the high nitrogen pressure solution method (HNPS GaN), and GaN grown by hydride vapor phase epitaxy on silicon (GaN/Si). Defect and impurity densities and carrier concentrations are quantified by x-ray diffraction, secondary mass ion spectroscopy, and Hall effect studies, respectively. Power-dependent photoluminescence measurements reveal GaN near-band-edge emissions from all samples having mixtures of free exciton and band-to-band transitions. Only the defect luminescence in the GaN/Si sample remains unsaturated, in contrast to those from the HNPS GaN and GaN/Al2O3 samples. Carrier lifetimes, extracted from time-resolved photoluminescence measurements, and internal quantum efficiencies, extracted from temperature-dependent photoluminescence measurements, are used to extract radiative and nonradiative lifetimes. Shockley–Read–Hall (A) and radiative recombination coefficients (B) are then calculated accordingly. Overall, the A coefficient is observed to be highly sensitive to the point defect density rather than dislocation density, as evidenced by three orders of magnitude reduction in threading dislocation density reducing the A coefficient by one order of magnitude only. The B coefficient, while comparable in the higher quality and lowly doped GaN/Al2O3 and HNPS GaN samples, was severely degraded in the GaN/Si sample due to high threading dislocation density and doping concentration.
An electrically reconfigurable liquid-core/liquid-cladding (L(2)) optical waveguide with core liquid γ-butyrolactone (GBL, ncore = 1.4341, εcore = 39) and silicone oil (ncladding = 1.401, εcladding = 2.5) as cladding liquid is accomplished using dielectrophoresis (DEP) that attracts and deforms the core liquid with the greater permittivity to occupy the region of strong electric field provided by Teflon-coated ITO electrodes between parallel glass plates. Instead of continuously flowing core and cladding liquids along a physical microchannel, the DEP-formed L(2) optical waveguide guides light in a stationary virtual microchannel that requires liquids of limited volume without constant supply and creates stable liquid/liquid interfaces for efficient light guidance in a simply fabricated microfluidic device. We designed and examined (1) stationary and (2) moving L(2) optical waveguides on the parallel-plate electromicrofluidic platform. In the stationary L-shaped waveguide, light was guided in a GBL virtual microchannel core for a total of 27.85 mm via a 90° bend (radius 5 mm) before exiting from the light outlet of cross-sectional area 100 μm × 100 μm. For the stationary spiral waveguide, light was guided in a GBL core containing Rhodamine 6G (R6G, 1 mM) and through a series of 90° bends with decreasing radii from 5 mm to 2.5 mm. With the stationary straight waveguide, the propagation loss was measured to be 2.09 dB cm(-1) in GBL with R6G (0.01 mM). The moving L-shaped waveguide was implemented on a versatile electromicrofluidic platform on which electrowetting and DEP were employed to generate a precise GBL droplet and form a waveguide core. On sequentially applying appropriate voltage to one of three parallel L-shaped driving electrodes, the GBL waveguide core was shifted; the guided light was switched at a speed of up to 0.929 mm s(-1) (switching period 70 ms, switching rate 14.3 Hz) when an adequate electric signal (173.1 VRMS, 100 kHz) was applied.
An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction (ω/2θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed.
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