In this study the use of polyurethane foam (PUF) as a heat seal coating for potential application in medical pouch packaging were investigated. We prepared PUF coatings at various foam densities and cell densities through mechanical foaming at various stirring speeds; then used a LUMisizer to examine their stabilities. After applying PUF coatings of various foam densities onto a medical packaging material (Tyvek®) at various thicknesses, then employed impulse heat sealing with linear low density polyethylene (LLDPE) films to fabricate medical pouches. In addition to investigating the morphology, tack properties, adhesion, scratch resistance, flexibility, and durability of the PUF coats, the peel strength and air permeability of the medical pouches were also measured. Increasing the foam density of the PUF coatings increased their stability; the PUF coats prepared at a higher foam density exhibited greater tackiness (<1 g/cm 2 ), adhesion (5B), scratch resistance (HB), flexibility (passes), and durability (ΔYI≤5). The peel strength measured in the T-peel configuration increased upon increasing the foam density and decreasing the coating thickness of the PUF coat/LLDPE pouches. The air permeability of the pouches increased upon increasing the foam density and cell density of the PUF coat/LLDPE pouches. Morphological studies using scanning electron microscopy were consistent with the experimental results.
In this paper, a fully logic compatible via diode is developed for high-density resistive random access memory (RRAM) array applications. This novel via diode is realized by advanced 28nm CMOS technology with Cu damascene via. The device is stacked between a top Cu via and a bottom Cu metal with a composite layer of TaN/TaON based dielectric film. An asymmetric current-voltage characteristic in this MIM structure provides a forward/reverse current ratio up to 10 6 . In a cross-point RRAM array, the suppression of sneak current path by incorporating this via diode enables array size to be greatly expended. Via diode provides an excellent solution for high-density embedded nonvolatile memory applications in the nano-scale CMOS technology.INDEX TERMS Advanced 28nm CMOS technology, cross-point, embedded nonvolatile memory, resistive random access memory, sneak current.
High-β spherical tokamak (ST) plasma conditions cut off propagation of electron cyclotron (EC) waves used for heating and current drive in conventional aspect ratio tokamaks. The electron Bernstein wave (EBW) has no density cutoff and is strongly absorbed and emitted at the EC harmonics, allowing EBWs to be used for heating and current drive in STs. However, this application requires efficient EBW coupling in the high-β, H-mode ST plasma regime. EBW emission (EBE) diagnostics and modelling have been employed on the National Spherical Torus Experiment (NSTX) to study oblique EBW to O-mode (B-X-O) coupling and propagation in H-mode plasmas. Efficient EBW coupling was measured before the L-H transition, but rapidly decayed thereafter. EBE simulations show that EBW collisional damping prior to mode conversion (MC) in the plasma scrape off reduces the coupling efficiency during the H-mode phase when the electron temperature is less than 30 eV inside the MC layer. Lithium evaporation during H-mode plasmas was successfully used to reduce this EBW collisional damping by reducing the electron density and increase the electron temperature in the plasma scrape off. Lithium conditioning increased the measured B-X-O coupling efficiency from less than 10% to 60%, consistent with EBE simulations.
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