Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al 0.3 Ga 0.7 N has the excellent performance among Al 0.17 Ga 0.83 N and Al 0.25 Ga 0.75 N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al 0.3 Ga 0.7 N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.
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