The hybrid electrode of single-wall
carbon nanotubes (SWCNTs)/Cu2O/ZnO nanorods (NRs)/graphene
used on the current-response
nonenzymatic glucose sensor was investigated herein, regarding the
mechanism of the formation of functional channel. The synthesis of
the hybrid electrode involved four steps. First, the graphene was
grown by chemical vapor deposition (CVD) and then wet-transferred
onto indium transparent oxide (ITO) glass. Second, a zinc oxide (ZnO)
seed layer was sputtered onto the graphene/ITO glass, and ZnO NRs
were gradually grown by the hydrothermal method. Third, the ZnO NRs
were clad with cuprous oxide (Cu2O) by the electrochemical
method. Fourth, the SWCNTs were dropped onto the Cu2O surface,
with a Nafion surfactant. X-ray diffraction spectra, scanning electron
microscopy spectra, Raman spectra, cyclic voltammograms, and amperometric
response diagrams were used to verify the performance of the device.
Results showed that sensitivity increased significantly from 11.2
to 289.8 μA mM–1 cm–2, linear
range increased significantly from 0.6 to 11.1 mM, and the coefficient
of determination (R
2) increased from 0.9766
to 0.9923, all by the addition of the SWCNTs/Cu2O functional
channel mechanism and without graphene. When the graphene was added
to the functional channel electrode, sensitivity increased again from
289.8 to 466.1 μA mM–1 cm–2 at low concentrations.
The illumination pattern of an LED street light is required to have a rectangular distribution at a divergence-angle ratio of 7:3 for economical illumination. Hence, research supplying a secondary optics with two cylindrical lenses was different from free-form curvature for rectangular illumination. The analytical solution for curvatures with different ratio rectangles solved this detail by light tracing and boundary conditions. Similarities between the experiments and the simulation for a single LED and a 9-LED module were analyzed by Normalized Cross Correlation (NCC), and the error rate was studied by the Root Mean Square (RMS). The tolerance of position must be kept under ± 0.2 mm in the x, y and z directions to ensure that the relative illumination is over 99%.
The effects of thermal annealing of titanium oxide films deposited by ion-beam assistance at annealing temperatures from 100 degrees C to 300 degrees C on the residual stress and optical properties of the films was investigated. The refractive indices and extinction coefficients increased gradually as the temperature was increased from 100 degrees C to 200 degrees C and then declined gradually as the temperature was increased further from 200 degrees C to 300 degrees C. The film lost oxygen and slowly generated lower suboxides as the annealing temperature was reduced below 200 degrees C, as determined by x-ray photoelectron spectroscopy (XPS). As the annealing temperature increased above 200 degrees C, the lower suboxides began to capture oxygen and form stable oxides. XPS measurements were made to verify both the binding energy associated with the Ti 2p line and the variation of the O 1s line. A Twyman-Green interferometer was employed for phase-shift interferometry to study the residual stress. The residual stress declined as the temperature was reduced from 100 degrees C to 200 degrees C because the lower suboxides reduced the stress in the film. Above 200 degrees C, the film began to capture oxygen, so the residual stress rose. At 300 degrees C, the film was no longer amorphous as the anatase was observed by x-ray diffraction.
Titanium oxide (TiO(2)) thin films were prepared by different deposition methods. The methods were E-gun evaporation with ion-assisted deposition (IAD), radio-frequency (RF) ion-beam sputtering, and direct current (DC) magnetron sputtering. Residual stress was released after annealing the films deposited by RF ion-beam or DC magnetron sputtering but not evaporation, and the extinction coefficient varied significantly. The surface roughness of the evaporated films exceeded that of both sputtered films. At the annealing temperature of 300 degrees C, anatase crystallization occurred in evaporated film but not in the RF ion-beam or DC magnetron-sputtered films. TiO(2) films deposited by sputtering were generally more stable during annealing than those deposited by evaporation.
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