The world‐wide spreading of coronavirus disease (COVID‐19) has greatly shaken human society, thus effective and fast‐speed methods of non‐daily‐life‐disturbance sterilization have become extremely significant. In this work, by fully benefitting from high‐quality AlN template (with threading dislocation density as low as ≈6×10 8 cm −2 ) as well as outstanding deep ultraviolet (UVC‐less than 280 nm) light‐emitting diodes (LEDs) structure design and epitaxy optimization, high power UVC LEDs and ultra‐high‐power sterilization irradiation source are achieved. Moreover, for the first time, a result in which a fast and complete elimination of SARS‐CoV‐2 (the virus causes COVID‐19) within only 1 s is achieved by the nearly whole industry‐chain‐covered product. These results advance the promising potential in UVC‐LED disinfection particularly in the shadow of COVID‐19.

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In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of ~700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (ELOG) process in which 3–4 μm AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.

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