I n this paper we present a simple CMOS analog memory structure using the floating gate of a MOS transistor. The structure is based o n a special but simple layout which allows significant tunneling at relatively low voltage levels. The programming of the m e mory is achieved using the standard Fowler-Nordheim tunneling and is implemented in a standard digital CMOS process with only one polysilicon layer. A simple on-chip memory driver circuit is also presented.Experimental results from test chips fabricated in a standard %micron CMOS process show sia: orders of magnitude dynamic range in current for subthreshold operation.
This study proposes a high step-down DC-DC converter with minimum elements. In the proposed converter, soft switching condition is provided with only one auxiliary switch, which simplifies the structure of the converter. Leakage inductor energy is used to create a zero voltage condition; so the mutations created by this inductor are neutralised. The control of the auxiliary switch is complementary to the main switch, which does not require a new and complex control circuit. Due to low voltage gain, the proposed converter is suitable for use in voltage regulator modules. The proposed converter is completely analysed. To confirm the theoretical analysis, an experimental sample is made and tested at 15 W and the results are presented. Also, the efficiency of the proposed converter at full load is 97.5%.This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.