The degradation of AlGaN-based UVC LEDs under constant temperature and constant current stress for up to 500 hrs was analyzed in this work. During each degradation stage, the two-dimensional (2D) thermal distributions, I-V curves, optical powers, combining with focused ion beam and scanning electron microscope (FIB/SEM), were thoroughly tested and analyzed the properties and failure mechanisms of UVC LEDs. The results show that: 1) the opto-electrical characteristics measured before/during stress indicate that the increased leakage current and the generation of stress-induced defects increase the non-radiative recombination in the early stress stage, resulting in a decrease in optical power; 2) the increase of temperature caused by the deterioration of the Cr/Al layer of p-metal after 48 hrs of stress aggravates the optical power in UVC LEDs. The 2D thermal distribution in conjunction with FIB/SEM provide a fast and visual way to precisely locate and analyze the failure mechanisms of UVC LEDs.

The time resolution of the transient process is usually limited by the minimum exposure time of the high-speed camera. In this work, we proposed a method that can achieve nanosecond temporal resolution with an ordinary CCD camera by driving the LED under test with a periodic short-pulse signal and multiple-cycle superposition to obtain two-dimensional transient junction temperature distribution of the heating process. The temporal resolution is determined by the pulse width of the drive source. In the cooling process, the Boxcar gated integration principle is adopted to complete the two-dimensional transient junction temperature distribution with temporal resolution subject to the minimum exposure time of the CCD camera, i.e., 1 μs in this case. To demonstrate the validity of this method, we measured the two-dimensional transient junction temperature distribution of the blue LEDs according to the principle of thermoreflectance and compared it with the thermal imaging method.

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