Patterned graphene oxide (GO) layer is prepared by site-selective deposition of GO on patterned self-assembled monolayer (SAM). Deep ultraviolet (DUV) exposure on octadecyltrichlorosilane (OTS) SAM through photomask produces hydrophobic/hydrophilic pattern, and the hydrophilic region is reacted with aminopropyltriethoxysilane (APTES), which is preferentially wetted with GO through ionic interaction between carboxylic acid groups of GO and amino groups of APTES SAM. As-prepared GO pattern can be further transformed to chemically reduced graphene oxide (RGO) pattern after chemical reduction with hydrazine. Both Raman and electrical conductivity measurements confirm the successive preparation of RGO pattern.
We have fabricated SnO 2 /Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.
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