The effects of the annealing temperature on the structural and chemical properties of soluble-processed zinc-tin-oxide (ZTO) films were examined by transmission electron microscopy, atomic force microscopy, high resolution X-ray reflectivity, and X-ray photoelectron spectroscopy. The density and purity of the resulting ZTO channel layer increased with increasing annealing temperature, whereas the oxygen vacancy defect density decreased. As a result, the device performance of soluble ZTO thin film transistors (TFTs) was improved at higher annealing temperature. Although the 300 °C-annealed ZTO TFT showed a marginal field-effect mobility (μFE) and high threshold voltage (Vth) of 0.1 cm(2)/(V s) and 7.3 V, respectively, the 500 °C-annealed device exhibited a reasonably high μFE, low subthreshold gate swing (SS), Vth, and Ion/off of 6.0 cm(2)/(V s), 0.28 V/decade, 0.58 V, and 4.0 × 10(7), respectively. The effects of dark negative bias stress (NBS) and negative bias illumination stress (NBIS) on the degradation of transfer characteristics of ZTO TFTs were also investigated. The instability of Vth values of the ZTO TFTs under NBS and NBIS conditions was suppressed with increasing annealing temperature. To better understand the charge trapping mechanism, the dynamics of Vth shift with NBS and NBIS time for all ZTO TFTs was analyzed on the basis of the stretched exponential relaxation. The negative Vth shift for each transistor was accelerated under NBIS conditions compared to NBS, which resulted in a higher dispersion parameter and smaller relaxation time for NBIS degradation. The relaxation time for NBS and NBIS instability increased with increasing annealing temperature, which is discussed on the basis of the transition mechanism of oxygen vacancy defects.

The electrochemical nitrogen reduction reaction (NRR) has been regarded as a promising alternative to the conventional Haber–Bosh process for NH3 synthesis. Inspired by the Fe–Mo–S cofactor in the enzyme nitrogenase, metal sulfide catalysts, mostly Fe- or Mo-based sulfides, have recently received great interest. Here, we propose Cu2–x S (0 ≤ x < 1) as an efficient NRR electrocatalyst. Electrochemical tests at room temperature and atmospheric pressure reveal that Cu1.81S achieves a high NH3 yield of 2.19 μmol h–1 cm–2 along with a Faradaic efficiency of 14.1% at −0.1 V versus reversible hydrogen electrode in an aqueous electrolyte. According to our first-principles calculations, the superior NRR properties originate from the threefold-coordinate Cu sites in Cu1.81S. These sites enable N–H···S hydrogen bonding during N2H y adsorption and stabilize the intermediates on the Cu2–x S surfaces, leading to a significant decrease in the overpotential limit for the NRR. Moreover, the threefold sites not only provide a bioinspired NRR pathway similar to that of nitrogenase but also enable both distal and alternating pathways, increasing the efficiency for the NRR. This study presents an attractive electrocatalyst for the NRR and opens an alternative route to explore chalcogenides and halides as NRR catalysts where the hydrogen-bonding mediation can similarly operate.

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Duchenne's muscular dystrophy (DMD) is an X-linked recessive disease. Clinical descriptions of the disorder focus principally on skeletal muscle degeneration. Another manifestation, which involves the gastrointestinal tract, may be fatal. But its prevalence remains undefined. We report here a case of acute gastroparesis associated with Duchenne's muscular dystrophy. In our case, the patient's symptoms were improved by prokinetic agents and timely decompression in life-threatening acute gastric dilatation.

Thiazolidinedione. -A variety of novel pyrimidine derivatives having a thiazolidinedione moiety [cf. (X), (XI)] is synthesized and evaluated for their antidiabetic activity. Derivatives (Xc) and (Xd) exhibit considerably more potent biological activities than the reference compounds rosiglitazone and pioglitazone. -(LEE, H. W.; KIM, B. Y.; AHN, J. B.; KANG, S. K.; LEE, J. H.; SHIN, J. S.; AHN, S. K.; LEE, S. J.; YOON, S. S.; Eur.

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