The dielectric, piezoelectric properties, and electric-field-induced strains of the 0.2Pb(Mg1/3Nb2/3)O3–xPbZrO3–(0.8−x)PbTiO3 (x=0.30–0.50) compositions close to the morphotropic phase boundary (MPB) have been systematically investigated as a function of PbZrO3 content (x). The phase approached from the tetragonal toward the rhombohedral phase when the PbZrO3 contents (x) increased. The maximum remnant polarization of 32.3 μC/cm2 was observed at the composition of x=0.40 near the MPB, and the specimen of x=0.39 showed the highest transverse strain value of 1.34×10−3 at 23 kV/cm. The values of Kp and d33 (Kp=0.65 and d33=454) showed maximum at the composition x=0.38 which was a tetragonal-rich phase, indicating the enhanced piezoelectric response.
Effect of stacking layers on the microwave dielectric properties of the MgTiO3/CaTiO3 (MTO/CTO) multilayered thin films prepared by the metalorganic solution deposition technique (MOSD) was investigated. As the thickness of CTO film in the MTO/CTO multilayered films increased, the dielectric constant (K) increased and temperature coefficient of dielectric constant (TCK) changed from positive to negative values by dielectric series mixing rule. Especially, MTO(100 nm)/CTO(200 nm) multilayered films exhibited a TCK of +10 ppm/°C, indicating temperature stability. The dielectric losses (tan δ) of MTO/CTO multilayered films increased with an increase of CTO layers. This result was attributed to the fact that the stresses induced by the higher thermal‐expansion coefficient of CTO than that of MTO. Also, as compared with MTO(100 nm)/CTO(200 nm) film, the K and TCK of MTO(50 nm)/CTO(200 nm)/MTO(50 nm) film were not changed, but the dielectric losses increased. This result indicated that the dielectric loss was affected by the number of interfaces between CTO and MTO layers.
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