The addition of chalcone and amine components into indirubin-3′-oxime resulted in 15 new derivatives with high yields. Structures of new derivatives were also elucidated through 1D, 2D-NMR and HR-MS(eSi) spectra and X-ray crystallography. All designed compounds were screened for cytotoxic activity against four human cancer cell lines (HepG2, LU-1, SW480 and HL-60) and one human normal kidney cell line (HEK-293). Compound 6f exhibited the most marked cytotoxicity meanwhile cytotoxicity of compounds 6e, 6h and 6l was more profound toward cancer cell lines than toward normal cell. These new derivatives were further analyzed via molecular docking studies on GSK-3β enzyme. Docking analysis shows that most of the derivatives exhibited potential inhibition activity against GSK-3β with characteristic interacting residues in the binding site. The fast pulling of ligand scheme was then employed to refine the binding affinity and mechanism between ligands and GSK-3β enzyme. the computational results are expected to contribute to predicting enzyme target of the trial inhibitors and their possible interaction, from which the design of new cytotoxic agents could be created in the future. Cancer is ranked second globally as cause of death. The disease originated due to the inability of cells to control growth, often leading to the formation of cancerous tumors or liquid cancer. (i.e. leukemia and lymphoma cancer). Routines for cancer treatment consist of chemotherapy and radiotherapy where the former utilizes molecule-size drugs aiming at eradication and inhibition of cancer tumors. However, this treatment technique has been shown to suffer from several inherent shortcomings including the development of drug resistance, off-target toxicity and limited targeting capabilities 1,2. Glycogen synthase kinase-3 (GSK-3) is defined as a multifunctional serine/threonine protein kinase that regulates the phosphorylation of various cellular targets 3. The function of GSK-3 is essential for the development

Specular spin valves (SVs) containing nano-oxide layers (NOLs) structured as substrate/seed/AF/P1/NOL/P2/Cu/F/NOL, have been fabricated. The NOLs were formed by natural oxidation in different ambient atmospheres of pure oxygen, oxygen/nitrogen and oxygen/argon gas mixtures. The fabrication conditions were optimized to enhance the magnetoresistance (MR) ratio, to suppress the interlayer coupling fields (Hf) between the free and pinned layers, to suppress the high interface density of the NOL, to ease the control of the NOL thickness and to form a smooth NOL/P2 interface for promoting specular electron scattering. The characteristics of our specular SVs are the MR ratio of 14.1%, the exchange bias field of 44–45 mT, and Hf weaker than 1.0 mT. The optimal conditions for oxidation time, total oxidation pressure and the annealing temperature were found to be 300 s, 0.14 Pa (oxygen/argon = 80/20) and 250°C, respectively. Also, the origin of thermal stability of MMn-based (M = Fe, Pt, Ir, etc) specular SVs has been explained in detail by chemical properties of NOL using secondary-ion mass spectroscopy and x-ray photoelectron spectroscopy depth profile analyses. Thermal stability turns out to be caused by a decrease in MR ratios at high temperatures (>250°C), which is a serious problem for device applications using the SV structure as a high density read head device.

Short time relaxation effect in Nd 0 5 Sr 0 5 MnO 3 manganites was observed. The effect is manifested as negative peak of imaginary component of ac magnetic susceptibility near the point of first order phase transition. The effect is explained at the frame of Landau theory of phase transition, where the coexistence of metastable and stable phases is considered.

Si(100)/CoFe/AlO(x)/CoFe/FeMn/Cu/Ta magnetic tunnelling transistors (MTTs) with differing base thicknesses (W) were investigated. The magneto-transport properties of the MTTs were measured at 77 K and room temperature (RT). We obtained magneto-current ratios of 48.3% and 55.9% for emitter-base bias voltages of 1.45 and 2.0 V, respectively, at 77 K. The transfer ratios are 2.83 x 10(-5) and 1.52 x 10(-4), respectively, corresponding to bias voltages of 1.45 and 2.0 V. Moreover, the highest tunnel magneto-resistance (TMR) ratios turned out to be 12% and 20% for a base thickness of 30 A at RT and 77 K, respectively. These properties raise not only some fundamental questions regarding the phenomenon of spin-independent tunnelling at low and room temperatures, but also show some promising aspect for magneto-electronic applications. In addition, we attempted to elucidate the reason behind the outstanding TMR effect at low and room temperatures. Finally, the origin of the decrease in the mean free path asymmetry ([Formula: see text]) was clarified by using x-ray photoelectron spectroscopy profile analysis of the elements existing in the interface between Si and the CoFe base (Co, Fe, Al, Si, O).

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