Silicon epitau-xial thin-fihn growth process 4.2.1 Reactor configuration for experilnents and calculations 4.2.2 Basic equations for transport phenomena and chemical reaction 4.3 Resul t and discussion 4.3.1 Silicon t hin-fi Inl growth and t hi ckness on the rotating substrate 4.3 .2 Transport phenoIl1ena induced by rotating substrate 4. 3. 3 Method to inlprove filnl thickness unifornlity 4.4 Concl usions N O'lnenclature References Chapter 5 Model on Transport phenomena and Silicon Epitaxial Growth of Thin-Film in SiHCI 3-H 2 Systern under Atmospheric Pressure 89 5. 1 Introduction 90 5.2 Preparation of sili con epi taxial t hin-filrns 90 6 5.3 Basic equations governing the epitax:ial reactor 5.4 Mathematical model of the rate process 5.4.1 Chcrnical species in the gas phase 5.4.2 Chemical species and adsorption at substrate surface 5.4.3 Cherillcal reactions and rate process at the surface 5.5 Reasults and discussion 5.5.1 Silicon epitaxial growth rate and grown HIDl quality 5.5.2 Transport phenornena in the horizontal reactor 5.5.3 Surface rate process 5.5.4 Evaluation of HCl etching effect on silicon epitaxial growth rate 5.5.5 State of surface during epitaxial growth 5.5.6 Non-linear increase in epitaxial growth rate 5.6 SUITunary N ornenclature References
The change in microroughness of a silicon substrate surface is studied at each step of an in situ cleaning method performed entirely in a hydrogen ambient at atmospheric pressure, which comprises the removal of native oxide film using hydrogen fluoride gas and the removal of an organic hydrocarbon film using hydrogen chloride gas. The root-meansquare average roughness and the power spectral density show that no surface roughening is caused by this in situ cleaning method. Additionally, it is shown in this study that heat-treatment at 1223 K in a hydrogen ambient at atmospheric pressure can smooth the silicon substrate surface when the surface is bare. The effect of the removal of an organic hydrocarbon film using hydrogen chloride gas on the morphology of the silicon substrate surface is also studied.
The boron concentration profile in silicon epitaxial wafers grown under atmospheric pressure was investigated in two types of epitaxial reactors. Transport phenomena are studied both by numerical calculations or by a gas flow visualization technique. The difference between the measured boron concentration profile and the calculated one using Fick's law was assumed to be due to autodoping. In epitaxial wafers grown at temperatures lower than 1273 K on a p-type substrate in a single-wafer horizontal reactor which has no recirculation of gas, the boron concentration profile changed abruptly at the interface between the epitaxial film and the substrate since the profile is formed only due to solid-state diffusion. In contrast, in a pancake reactor having large recirculation of gas, a gradual change in the boron concentration profile was observed due to autodoping via the gas phase. In conclusion, large amounts of recirculation of gas in an epitaxial reactor should be avoided to obtain an abrupt boron concentration profile.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.