We investigated the segregation gettering of copper in P/P + epitaxial wafers and determined the segregation coefficient of copper in the P + layer at room temperature by evaluating the copper concentration using SIMS. The segregation coefficient of copper at the P + layer with a boron concentration less than 10 18 atoms/cm 3 was confirmed to be three-orders-of-magnitude lower than that expected by the theoretical model proposed. In this paper we discuss two possible explanations for these results. 1) The segregation coefficient of copper, that is, the dependence of the equilibrium concentration of copper on the boron concentration is overestimated in the theoretical model proposed. 2) Certain barriers work to prevent copper from diffusing and segregating near the surface of the wafers.
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