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The a-and c-axis resistivities and Hall coefficients of self-intercalated IT-CdI, type layered crystals of TiS, are measured over the temperature range 1.5 to 300 K. The temperature dependence of the carrier concentration a t low temperatures T < 150 K c m be explained by a simple model which takes into account both, the host Ti 3d conduction band and a localized impurity level Ei due to excess Ti atom. The position of Ei is found to lie by about 5 meV above the Fermi energy. The self-intercalated Ti atoms become ionized impurity scattering centers as Ti4f and Ti3f ions, whose relaxation times are calculated to give a good fit to the observed residual resistivity vs. carrier concentration curve.