SUMMARYDue to their great fabrication flexibility, multilayered conductive thin films are used as a shielding material by thin film metal plating on a dielectric body. In the simulation of the shielding effect of these multilayered thin conducting films by the FDTD method, it is necessary to use a cell size less than the conductor thickness in direct modeling. However, since the shield material generally is much thicker than the metal thin film, the number of cells needed in such modeling is prohibitive and calculation becomes difficult. In this paper, as a subcell method in the FDTD approach, an infinitesimally thin resistive film that has a transmission coefficient equivalent to the multilayered conducting thin film is introduced. By this technique, modeling becomes possible without increasing the number of cells unnecessarily.
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