For properly selected patients, laparoscopically assisted total gastrectomy can be a curative and minimally invasive treatment for early gastric cancer.
The three-dimensional structure of a GaAs (100) surface, treated in a (NH4)2Sx solution and annealed at 200 °C, was studied in an atomic scale by x-ray photoemission spectroscopy (XPS), high-resolution Rutherford backscattering spectroscopy (RBS), and scanning tunneling microscopy (STM). XPS spectra showed that S termination could suppress oxidization of the surface in the air and that S atoms on a GaAs surface bonded As atoms. The disorder of atomic sites in the surface region of a S-terminated GaAs was found by RBS channeling spectra to be smaller than that of an untreated sample. The thickness of the sulfur layer on GaAs was found to be about 1.5 monolayers from RBS measurement. STM observation of the S-terminated surface revealed a 1×1 lateral structure of the sulfur layer on the GaAs (100) surface.
We have studied the asymmetric broadening of the Raman spectra of In
x
Ga1-x
N grown on sapphire substrates with the aid of the spatial correlation model. The asymmetric broadening of the E2 phonon mode is enhanced in the region of immiscibility by increasing the indium molar fraction. The correlation length, which corresponds to the decay length of the E2 phonon mode, was estimated for the first time. It was on the order of 6–10 nm, which is on the same order of magnitude as the size of the columnar structure suggested by transmission electron microscope analyses.
Although this study was conducted non-randomly with a small number of patients, the PIHC group had a higher survival rate and better prognosis compared with the control group.
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