ZnO film was prepared from 0.1moldm−3 zinc nitrate aqueous solution by the potentiostatic technique using a three-electrode system at 313–343K . The ZnO film was characterized by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. In addition, measurements of interface pH and electrochemical quartz crystal microbalance (EQCM) during the electrodeposition were carried out to elucidate the deposition mechanism. It was disclosed that the deposition scheme at the initial stage is quite different depending on bath temperature. The change in deposition mechanism with temperature is closely related to the increased thermodynamic stability of ZnO at high temperature. Based on EQCM analysis, it was suggested that the precursor of ZnO is slowly transformed to ZnO at low temperature, but the formation of ZnO is extremely rapid at high temperature, i.e., ZnO directly deposits at high temperature. Auger analysis indicated that transition from the precursor to ZnO crystal started from the bottom to the surface when the amount of precursor became larger than a critical value depending on temperature.

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We synthesized xKTiO2F–(1−x)BaTiO3 solid solution by the high pressure and temperature method. With regard to the temperature dependence of the dielectric permittivity, the three anomalies corresponding to the three phase transitions of BaTiO3 merged with the increase in x, and only one peak was observed for 0.12≤x≤0.20. The variation in TC with the composition, dTC/dx, of xKTiO2F–(1−x)BaTiO3 was approximately −14 K/mol % for x≥0.12, which is almost the same as and larger than that of the 1/3xBaLiF3−(1−1/3x)BaTiO3 and Ba(Ti1−xMx)O3 (B=Zr, Sn, Hf, and Ce) solid solutions, respectively. This result indicates that the phase transition temperature is significantly affected by the substitution with F ion. Furthermore, it was found that the 0.15KTiO2F−0.85BaTiO3 is an ideal relaxor and that the remnant polarization is 5.6 μC/cm2 at 70 K, which is comparable to that of Ba(Ti0.7Zr0.3)O3. However, the εm of 0.15KTiO2F−0.85BaTiO3 (≈5000 at 100 kHz) was smaller than that of the B-site ion-substituted relaxors: Ba(Ti0.7Zr0.3)O3 and Ba(Ti0.82Sn0.18)O3. Since the remnant polarization of 0.15KTiO2F−0.85BaTiO3 at 70 K was comparable to that of Ba(Ti0.7Zr0.3)O3 at 175 K, the small εm of 0.15KTiO2F−0.85BaTiO3 is found to be due to the decrease in the dielectric permittivity in the paraelectric region.

Synthesis of the Novel Perovskite-Type Oxyfluoride PbScO2F under High Pressure and High Temperature. -The new title compound is synthesized from a stoichiometric mixture of PbF2, Sc2O3, and PbO (Au capsule, 4 GPa, 1000°C, 30 min) and characterized by powder XRD, TGC/DTA, and dielectric measurements. PbScO2F crystallizes in the space group Pm3m and exhibits a cubic perovskite-type structure with Pb displaced from the ideal A-site positions. The dielectric permittivity of PbScO 2 F is 80 at room temperature and decreases slightly with decreasing temperature. Frequency dispersion occurs at about 100 K, which might be related to the displacement of the Pb ions. -(KATSUMATA*, T.; NAKASHIMA, M.; UMEMOTO, H.; INAGUMA, Y.; J. Solid State Chem. 181 (2008) 10, 2737-2740; Dep. Chem., Fac. Sci., Gakushuin Univ., Toshima, Tokyo 171, Japan; Eng.) -W. Pewestorf 05-008

The adhesion force of electroless nickel–phosphorus (Ni–P) platings prepared on silicon nitride (SiN), aluminum (Al), and polyimide (PI) substrates using complexing agents of glycine, succinic acid, succinic acid with glycine, and succinic acid with malic acid was demonstrated for the application to wafer-level packaging in large-scale integrated circuits. The adhesion strength of Ni–P platings was investigated by the tape-peeling test and the universal mechanical strength tester. As results, no peeling of Ni–P films formed using glycine, succinic acid, and succinic acid with glycine were observed, although Ni–P films formed using succinic acid with malic acid showed peeling. Thus, Ni–P plating formed using succinic acid with malic acid gave the smallest adhesion force. In contrast, the adhesion force of Ni–P platings formed using succinic acid with glycine on SiN, Al, and PI was the largest, approximately 850 kg cm−2, among Ni–P platings formed using those complexing agents. The growth rate of Ni–P films formed using succinic acid, succinic acid with glycine, and succinic acid with malic acid was uneven on SiN, Al, and PI. In comparison, Ni–P plating formed using glycine provided uniform growth rate on SiN, Al, and PI.