We investigated edge configuration and quantum confinement effects on electron transport in armchair-edged graphene nanoribbons (A-GNRs), by using a computational approach. We found that the edge bond relaxation has a significant influence not only on the band-gap energy, but also on the electron effective mass. We also found that A-GNRs with N = 3m family (N is number of atoms in its transverse direction and m a positive integer) exhibits smaller effective mass, by comparing at the same band-gap energy. As a result, A-GNRs with N = 3m family are found to be favorable for use in channels of field-effect transistors.
In this paper, we investigate the upper limit performance of bilayer graphene (BLG) and graphene nanoribbon (GNR) field-effect transistors (FETs) based on a first-principles approach. We have found that GNR-FETs with ribbon widths of about 3–4 nm exhibit better device performance than n-channel Si metal–oxide–semiconductor FETs and InP-high-electron-mobility transistors (HEMTs). Although a BLG-FET shows an inferior performance potential to GNR-FETs with a similar band gap, it is comparable to InP-HEMTs. The present simulation study indicates that both GNR and BLG are expected to be a post-Si channel material for high-speed digital switches in logic circuits.
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