This paper presents the 45OOV-75OA planar gate IEGT (P-IEGT), which has wide cell width. Increasing gate width, the planar devices achieves the carrier injection enhancement effect. Wide gate structure shows better characteristics for high voltage planar devices than the conventional IGBT. The on-state vloltage drop is 3.8V a t 50Ncm2 ,Tj=25"C. The value is low enough for 4500V rated MOS gate transistor. We achieve turn off capability at Vce(peak)=4000V, Ic=1600A without adding dvjdt snubber a t T~=125 "C . The result shows that P-IEGT has very wide SOA.
This paper reports the development of a converter for a large-capacity STATCOM. The converter consists of multiple series-connected 1.7kV module-type IGBTs. An active gate controlled circuit that we developed was applied to the IGBT gate drive circuit, eliminating large-capacity voltage-clamped snubber circuits or voltage balancing circuits that are conventionally needed for a series-connected IGBT converter, which considerably simplifies the converter. A rated-power test was performed, the results of which confirmed satisfactory performance of the developed converter.
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